NTE NTE252 Datasheet
NTE251 (NPN) & NTE252 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain @ IC = 10A:
= 2400 Typ (NTE251)
h
FE
= 4000 Typ (NTE252)
h
FE
D Collector–Emitter Sustaining Voltage: V
CEO(sus)
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
= 100V Min
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EB
C
(TA = +25°C unless otherwise specified)
CEO
CB
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 0.915W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.09°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter SustainingVoltage V
CEO(sus)IC
Collector Cutoff Current I
I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
CE(sat)IC
BE(sat)IC
BE(on)
Dynamic Characteristics
Small–Signal Current Gain h
Magnitude of Common Emitter
|hfe| VCE = 3V, IC = 10A, f = 1MHz 4.0 – – MHz
Small–Signal Short–Circuit
Forward Current Transfer Ratio
CEO
CEX
EBO
FE
fe
= 100mA, IB = 0 100 – – V
VCE = 50V, IE = 0 – – 1.0 mA
VCE = 100V, V
VCE = 100V, V
= +150°C
T
A
= 1.5V – – 0.5 mA
BE(off)
BE(off)
= 1.5V,
– – 5.0 mA
VBE = 5V, IC = 0 – – 2.0 mA
VCE = 3V, IC = 10A 750 – 18000
VCE = 3V, IC = 20A 100 – –
= 10A, IB = 40mA – – 2.0 V
IC = 20A, IB = 200mA – – 3.0 V
= 20A, IB = 200mA – – 4.0 V
VCE = 3V, IC = 10A – – 2.8 V
VCE = 3V, IC = 10A, f = 1kHz 300 – –
Output Capacitance
C
VCB = 10V, IE = 0, f = 0.1MHz
ob
NTE251
NTE252
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Schematic Diagram
C
B
E
NPN PNP
B
pF
–
–
–
400
–
600
C
E
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