NTE NTE2517, NTE2518 Datasheet
NTE2517 (NPN) & NTE2518 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
D Low Saturation Voltage
D High Current Capacity and Wide ASO
Applications:
D Voltage Regulators
D Relay Drivers
D Lamp Drivers
Absolute Maximum Ratings:
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
(TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 50V, IE = 0 – – 100 nA
VEB = 4V, IC = 0 – – 100 nA
VCE = 2V, IC = 100mA 140 – 400
VCE = 2V, IC = 2A 35 – –
Gain Bandwidth Product f
T
VCE = 10V, IC = 50mA – 140 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2517
C
ob
NTE2518 – 25 – pF
Collector to Emitter Saturation Voltage
NTE2517
V
CE(sat)IC
NTE2518 – 250 500 mV
VCB = 10V, f = 1MHz – 10 – pF
= 1A, IB = 50mA – 110 300 mV
Base to Emitter Saturation Voltage V
Collector to Base Breakdown Voltage V
Collector to Emitter Breakdown Voltage V
Emitter to Base Breakdown Voltage V
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
Turn–On Time t
Storage Time
NTE2517
BE(sat)IC
on
t
stg
= 1A, IB = 50mA – 0.85 1.2 V
= 10µA, IE = 0 60 – – V
= 1mA, RBE = ∞ 50 – – V
= 10µA, IC = 0 6 – – V
IC = 10A, IB1 = 10A,
– 35 – ns
IB2 = 1A
– 550 – ns
NTE2518 – 350 – ns
Fall Time t
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
f
.433
(11.0)
– 30 – ns
.130
(3.3)
ECB
.610
(15.5)
.094 (2.4)
Loading...