NTE NTE2516, NTE2515 Datasheet

NTE2515 (NPN) & NTE2516 (PNP)

Silicon Complementary Transistors

High Current Switch

Features:

D Low Collector Emitter Saturation Voltage
D High Gain–Bandwidth Product
D Excellent Linearity of h
D Fast Switching Time

Applications:

D Display Drivers
D High Speed Inverters
D Converters

FE

Absolute Maximum Ratings:

Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CBO

CEO

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Power Dissipation, P

C

TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

(TA = +25°C unless otherwise specified)

J

stg

CBO
EBO

FE

120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCB = 100V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA
VCE = 5V, IC = 500mA 140 – 240
VCE = 5V, IC = 3A 40 – –

Gain–Bandwidth Product

NTE2515

NTE2516 – 130 – MHz

f

T

VCE = 10V, IC = 500mA

– 180 – MHz

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Output Capacitance

NTE2515

C

ob

VCB = 10V, f = 1MHz

– 40 – pF

NTE2516 – 65 – pF

Collector Emitter Saturation Voltage

NTE2515

V

CE(sat)

IC = 2A, IB = 200mA

– 150 400 mV

NTE2516 – 200 500 mV
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

Turn–On Time t
Storage Time

NTE2515

NTE2516

Fall Time t

on

t

stg

f

= 2A, IB = 200mA – 0.9 1.2 V
= 10µA, IE = 0 120 – – V
= 1mA, RBE = ∞ 100 – – V
= 10µA, IC = 0 6 – – V

VCC = 25V, VBE = –5V,

– 100 – ns
10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1

Duty Cycle ≤ 1%, Note 1

– 900 – ns

– 800 – ns

– 50 – ns

Note 1. For NTE2514, the polarity is reversed.

.315 (8.0)

C

E

.106 (2.7)

.433

(11.0)

B

.610

(15.5)

.094 (2.4)