NTE NTE2512, NTE2511 Datasheet
NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 800MHz Typ.
D Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: C
NTE2512: C
Applications:
D Very High–Definition CRT Display
D Video Output
D Color TV Chroma Output
D Wide–Band Amp
= 2.9pF
re
= 4.6pF
re
Absolute Maximum Ratings:
Collector Base Voltage, V
Collector Emitter Voltage, V
Emitter base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
J
stg
CBO
EBO
FE
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 60V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 1.0 µA
VCE = 10V, IC = 50mA 100 – 320
VCE = 10V, IC = 400mA 20 – –
Gain Bandwidth Product f
T
VCE = 10V, IC = 100mA – 800 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Emitter Saturation Voltage
NTE2511
NTE2512 – – 0.8 V
Base Emitter Saturation Voltage V
Collector Base Breakdown Voltage V
Collector Emitter Breakdown Voltage V
Emitter Base Breakdown Voltage V
Output Capacitance
NTE2511
NTE2512 – 5.2 – pF
Reverse Transfer Capacitance
NTE2511
NTE2512 – 4.6 – pF
V
CE(sat)
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
C
ob
C
re
IC = 100mA, IB = 10mA
= 100mA, IB = 10mA – – 1.0 V
= 10µA, IE = 0 80 – – V
= 1mA, RBE = ∞ 60 – – V
= 100µA, IC = 0 4 – – V
VCB = 30V, f = 1MHz
VCB = 30V, f = 1MHz
– – 0.6 V
– 3.4 – pF
– 2.9 – pF
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.175
(4.45)
Max
.118 (3.0)
Dia
.030 (.762) Dia
ECB
.090 (2.28)
.130 (3.3)
Max
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