NTE NTE2510 Datasheet

NTE2510

Silicon NPNTransistor

High Frequency Video Output

Features:

D High Gain Bandwidth Product: fT = 2GHz
D High Current Capacity: IC = 500mA

Applications:

D High–Definition CRT Display Video Output
D Wide–Band Amp

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–to–Base Voltage, V

Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I

C

Continuous 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 1000mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P

C

TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

J

stg

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain Bandwidth Product f

CBO
EBO

FE

T

VCB = 20V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 5.0 µA
VCE = 5V, IC = 50mA 60 – 120
VCE = 5V, IC = 500mA 20 – –
VCE = 5V, IC = 100mA – 2.0 – GHz

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Output Capacitance C
Reverse Transfer Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V

.118 (3.0)

Dia

CE(sat)IC
BE(sat)IC

.315 (8.0)

ob

VCB = 10V, f = 1MHz – 6.0 – pF
VCB = 10V, f = 1MHz – 4.6 – pF

re

= 300mA, IB = 30mA – 0.3 0.8 V
= 300mA, IB = 30mA – 0.9 1.2 V

.130
(3.3)

.295
(7.5)

.433

(11.0)

ECB

.610

(15.5)

.094 (2.4)