NTE NTE2509, NTE2508 Datasheet
NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 500MHz
D High Breakdown Voltage: V
D Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, V
CBO
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
EBO
Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
TA = +25°C 1.3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 8W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Operating Junction Temperature, T
Storage Temperature Range, T
= 120V Min
CEO
CEO
J
stg
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
(TA = +25°C unless otherwise specified)
CBO
EBO
FE
T
VCB = 80V, IE = 0 – – 0.1 µA
VEB = 2V, IC = 0 – – 0.1 µA
VCE = 10V, IC = 50mA 40 – 320
VCE = 10V, IC = 200mA 20 – –
VCE = 10V, IC = 50mA – 400 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2508
C
ob
NTE2509 – 4.4 – pF
Reverse Transfer Capacitance
NTE2508
C
NTE2509 – 4.0 – pF
VCB = 30V, f = 1MHz – 3.1 – pF
VCB = 30V, f = 1MHz – 2.7 – pF
re
Collector to Emitter Saturation Voltage V
Base to Emitter Saturation Voltage V
.118 (3.0)
Dia
.295
(7.5)
CE(sat)IC
BE(sat)IC
.315 (8.0)
ECB
= 50mA, IB = 5mA – – 1.0 V
= 50mA, IB = 5mA – – 1.0 V
.130
(3.3)
.433
(11.0)
.610
(15.5)
.094 (2.4)
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