NTE2507
Silicon NPN Transistor
High Frequency Video Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
Collector Power Dissipation (T
Operating Junction Temperature, T
CBO
EBO
CEO
= +25°C), P
C
J
C
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
DC Current Gain h
Transition Frequency f
Output Capacitance C
.147 (3.75)
Dia Max
.070 (1.78) Max
CBO
FE
T
ob
VCB = 150V – – 0.1 µA
VCE = 10V, IC = 50mA 40 – 320
VCE = 30V, IC = 100mA – 400 – MHz
– 4.2 – pF
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Base
.100 (2.54)
Emitter
Collector/Tab