NTE NTE2506 Datasheet

NTE2506

Silicon NPN Transistor

High Frequency Video Driver

Description:

The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the
cascode stage of the driver for high–resolution color graphics monitors.

Features:

D High Breakdown Voltage
D Low Output Capacitance

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

= 100Ω), V

BE

EBO

C

≤ +85°C, Note 1), P

S

J

stg

CER

tot

Thermal Resistance, Junction–to–Soldering Point (T

≤ +85°C, Note 1), R

S

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJS

115V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

95V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

110V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

18K/W. . . . . . . . . .

Note 1. T

Electrical Characteristics:

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V

Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

DC Current Gain h
Transition Frequency f

Collector–Base Capacitance C
Collector Capacitance C

is the temperature at the soldering point of the collector lead.

S

(TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

V

(BR)CBOIC
(BR)CEOIC
(BR)CERIC
(BR)EBOIE

CES

I

CBO

FE

T

cb

IB = 0, VCE = 50V – – 100 µA
IE = 0, VCB = 50V – – 20 µA
IC = 100mA, VCE = 10V, TA = +25°C 20 35 –
IC = 100mA, VCE = 10V, f = 100MHz,

T
IC = 0, VCB = 10V, f = 1MHz, TA = +25°C – 2.0 – pF
IE = ie = 0, VCB = 10V f = 1MHz – 3.5 – pF

c

= 0.1mA 115 – – V
= 10mA 95 – – V
= 10mA, RBE = 100Ω 110 – – V
= 0.1mA 3 – – V

0.8 1.2 – GHz

= +25°C

A

.450

(11.4)

Max

.655

(16.6)

Max

.330 (8.38) Max

.175

(4.45)

Max

.118

(3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

ECB

.090 (2.28)