NTE NTE2503 Datasheet

NTE2503

Silicon NPN Transistor

High Gain Switch

Features:

D High DC Current Gain
D High Current Capacity
D Low Collector–Emitter Saturation Voltage
D High Emitter–Base Voltage

Applications:

D AF Amplifier
D Various Driver

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I

EBO

C

(TA = +25°C unless otherwise specified)

CEO

CBO

Continuous 700mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulse 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Current Gain–Bandwidth Product f
Output Capacitance C

C

J

stg

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

T
ob

25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCB = 20V, IE = 0 – – 0.1 µA
VEB = 10V, IC = 0 – – 0.1 µA
IC = 50mA, VCE = 5V 800 1500 3200
IC = 500mA, VCE = 5V 600 – –
IC = 50mA, VCE = 10V – 270 – MHz
VCB = 10V, f = 1MHz – 9 – pF

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

µ

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Saturation Voltage V
Base Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Turn–On Time t
Storage Time t
Fall Time t

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

.210

(5.33)

Max

on

stg

= 500mA, IB = 10mA – 0.15 0.50 V
= 500mA, IB = 10mA – 0.9 1.2 V
= 10µA, IE = 0 30 – – V
= 1mA, RBE = ∞ 25 – – V
= 10µA, IC = 0 15 – – V

IB1 = 100mA,
IB2 = IC = 300mA,
Pulse Width = 20

Pulse Width = 20µs,
Duty Cycle ≤ 1%

f

s,

.135 (3.45) Min

Seating Plane

– 0.1 – µs
– 0.6 – µs
– 0.06 – µs

.500

(12.7)

Min

.100 (2.54)

.105 (2.67) Max

.205 (5.2) Max

.021 (.445) Dia Max

E C B

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max