NTE NTE25 Datasheet
NTE24 (NPN) & NTE25 (PNP)
Silicon Complementary Transistors
General Purpose Amplifier, Switch
Description:
The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package
designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A.
Features:
D High Collector–Emitter Breakdown Voltage: V
D Exceptional Power Dissipation Capability
CEO
= 80V
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
D
TA = +25°C 850mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25°C 2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J(max)
stg
thJC
Thermal Resistance, Junction–to–Ambient, R
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
(TA = +25°C unless otherwise specified)
(BR)CEOIC
CBO
EBO
FE
VCB = 100V, IE = 0 – – 0.1 µA
VEB = 5V, IC = 0 – – 100 nA
VCE = 2V, IC = 50mA 40 – –
VCE = 2V, IC = 250mA 40 – –
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= 10mA, IB = 0 80 – – V
167°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE = 2V, IC = 500mA 25 – –
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Current Gain Bandwidth Product f
Output Capacitance C
CE(sat)IC
BE(on)
.100 (2.54)
= 500mA, IB = 50mA – – 0.5 V
IC = 1000mA, IB = 100mA – – 1.5 V
VCE = 2V, IC = 1000mA – – 0.5 V
VCE = 5V, IC = 200mA, f = 100MHz 50 – – MHz
T
VCB = 10V, IE = 0, f = 1MHz – – 30 pF
ob
.200 (5.08)
.180 (4.57)
.180
E C B
(4.57)
.594
(15.09)
.018 (0.46) .015 (0.38)
3.050 (1.27)
.050 (1.27) .050 (1.27)
.140
(3.55)
.090 (2.28) R
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