NTE NTE246 Datasheet
NTE245 (NPN) & NTE246 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 4000 Typ @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Power Dissipation (T
CEO
CB
EB
= +25°C), P
C
D
Derate Above 25°C 0.857W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.17°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter SustainingVoltage V
Collector–Emitter Leakage Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CER
EBO
= 100mA, IB = 0, Note 1 80 – – V
VCE = 40V, IB = 0 – – 1.0 mA
VEB = 80V, RBE = 1kΩ – – 1.0 mA
VEB = 80V, RBE = 1kΩ, TC = +150°C – – 5.0 mA
VBE = 5V, IC = 0 – – 2.0 mA
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
FE
CE(sat)IC
VCE = 3V, IC = 5A 1000 – –
= 5A, IB = 20mA – – 2.0 V
IC = 10A, IB = 50mA – – 4.0 V
Base–Emitter Voltage V
BE
VCE = 3V, IC = 5A – – 3.0 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE245
C
B
.350 (8.89)
E
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
Emitter
1.187 (30.16)
NTE246
.215 (5.45)
.430
C
(10.92)
.665
(16.9)
.188 (4.8) R Max
B
.525 (13.35) R Max
Collector/CaseBase
E
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