NTE NTE243, NTE244 Datasheet
NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: V
CEO(sus)
D Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 2V Max @ IC = 4A
= 3V Max @ I
= 8A
C
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 0.571W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
= 80V Min @ 100mA
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.78°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter SustainingVoltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CEX
EBO
= 100mA, IB = 0, Note 1 80 – – V
VCE = 40V, IE = 0 – – 0.5 mA
VCE = 80V, V
VCE = 80V, V
VBE = 5V, IC = 0 – – 2.0 mA
= 1.5V – – 0.5 mA
BE(off)
= 1.5V, TA = +150°C – – 5.0 mA
BE(off)
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
FE
VCE = 3V, IC = 4A 750 – 18000
VCE = 3V, IC = 8A 100 – –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 4A, IB = 16mA – – 2.0 V
IC = 8A, IB = 80mA – – 3.0 V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
BE(sat)IC
BE(on)
= 8A, IB = 80mA – – 4.0 V
VCE = 3V, IC = 4A – – 2.8 V
Dynamic Characteristics
Small–Signal Current Gain h
Magnitude of Common Emitter
|hfe| VCE = 3V, IC = 3A, f = 1MHz 4.0 – – MHz
VCE = 3V, IC = 3A, f = 1kHz 300 – –
fe
Small–Signal Short–Circuit
Forward Current Transfer Ratio
Output Capacitance
NTE243
C
ob
VCB = 10V, IE = 0, f = 0.1MHz – – 200
NTE244 – – 300 pF
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE243
pF
C
B
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
E
.040 (1.02).312 (7.93) Min
Emitter
1.187 (30.16)
NTE244
.215 (5.45)
C
B
.430
(10.92)
E
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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