NTE NTE2431 Datasheet
NTE2431
Silicon PNP Transistor
High Voltage Amp/Switch
(Compl to NTE2430)
Description:
The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), V
Collector–Emitter Voltage (Open Base), V
Emitter–Base Voltage (Open Collector), V
DC Collector Current, I
Base Current, I
B
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
C
≤ +25°C, Note 1), P
A
J
stg
Thermal Resistance, Junction–to–Ambient (Note 1), R
Thermal Resistance, Junction–to–Tab, R
CBO
CEO
EBO
tot
thJA
thJTAB
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
10K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TJ = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
Collector–Emitter Saturation Voltage V
DC Current Gain h
Collector Capacitance C
Transitional Frequency f
CBO
I
CEO
EBO
(BR)CEOIC
CE(sat)IC
FE
VCB = 280V, IE = 0 – – 1 µA
VCE = 250V, IB = 0 – – 50 µA
VEB = 6V, IC = 0 – – 20 µA
VCE = 10V, IC = 50mA 30 – 120
IE = Ie = 0, VCB = 10, f = 1MHz – – 15 pF
c
VCE = 10V, IC = 10mA, f = 30MHz 15 – – MHz
T
= 50mA, IB = 0, L = 25mH 300 – – V
= 50mA, IB = 5mA – – 2 V
.174 (4.42)
.015 (0.32)
.059 (1.5)
.020 (.508)
.059 (1.5)
.067 (1.7)
ECB
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min
.118 (3.0)
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