NTE NTE2431 Datasheet

NTE2431

Silicon PNP Transistor

High Voltage Amp/Switch

(Compl to NTE2430)

Description:

The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use
in amplifier and switching switching applications.

Absolute Maximum Ratings:

Collector–Base Voltage (Open Emitter), V
Collector–Emitter Voltage (Open Base), V
Emitter–Base Voltage (Open Collector), V
DC Collector Current, I
Base Current, I

B

Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

C

≤ +25°C, Note 1), P

A

J

stg

Thermal Resistance, Junction–to–Ambient (Note 1), R
Thermal Resistance, Junction–to–Tab, R

CBO
CEO
EBO

tot

thJA

thJTAB

Note 1. Device mounted on a ceramic substrate; area = 2.5cm

2

, thickness = 0.7mm.

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

10K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

(TJ = +25°C unles otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
Collector–Emitter Breakdown Voltage V
Collector–Emitter Saturation Voltage V
DC Current Gain h
Collector Capacitance C
Transitional Frequency f

CBO

I

CEO
EBO

(BR)CEOIC

CE(sat)IC

FE

VCB = 280V, IE = 0 – – 1 µA
VCE = 250V, IB = 0 – – 50 µA
VEB = 6V, IC = 0 – – 20 µA

VCE = 10V, IC = 50mA 30 – 120
IE = Ie = 0, VCB = 10, f = 1MHz – – 15 pF

c

VCE = 10V, IC = 10mA, f = 30MHz 15 – – MHz

T

= 50mA, IB = 0, L = 25mH 300 – – V
= 50mA, IB = 5mA – – 2 V

.174 (4.42)

.015 (0.32)

.059 (1.5)

.020 (.508)

.059 (1.5)

.067 (1.7)

ECB

.096

(2.46)

.161
(4.1)

.041

(1.05)

Min

.118 (3.0)

Bottom View