NTE NTE2429, NTE2428 Datasheet
NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), V
Collector–Emitter Voltage, V
CER
Emitter–Base Voltage (Open Collector), V
DC Collector Current, I
DC Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
C
B
≤ +25°C, Note 1), P
A
J
stg
Thermal Resistance, Junction–to–Ambient (Note 1), R
Thermal Resistance, Junction–to–Tab, R
CBO
EBO
tot
thJA
thJTAB
Note 1. Device mounted on a ceramic substrate; area = 2.5cm
2
, thickness = 0.7mm.
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
10K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TJ = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CBO
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIE
CE(sat)IC
BE(sat)IC
Note 2. Measured under pulsed conditions.
VCB = 60V, IE = 0 – – 100 nA
VCB = 60V, IE = 0, TJ = +150°C – – 50 µA
= 10mA, IB = 0 80 – – V
= 10µA, VBE = 0 90 – – V
= 10µA, IC = 0 5 – – V
= 150mA, IB = 15mA, Note 2 – – 250 mV
IC = 500mA, IB = 50mA, Note 2 – – 500 mV
= 150mA, IB = 15mA, Note 2 – – 1.0 V
IC = 500mA, IB = 50mA, Note 2 – – 1.2 V
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain h
FE
VCE = 5V, IC = 100µA, Note 2 30 – –
VCE = 5V, IC = 100mA, Note 2 100 – 300
VCE = 5V, IC = 500mA, Note 2 50 – –
Transition Frequency f
VCE = 10V, IC = 50mA, f = 35MHz 100 – – MHz
T
Collector Capacitance
NTE2428
C
VCB = 10V, IE = Ie = 0, f = 1MHz – – 12 pF
c
NTE2429 – – 20 pF
Emitter Capacitance
NTE2428
C
VEB = 500mV, IC = Ic = 0, f = 1MHz – – 90 pF
e
NTE2429 – – 120 pF
Turn–On Time
NTE2428
t
on
I
= 100mA, I
Con
Bon
= –I
= 5mA – – 250 ns
Boff
NTE2429 – – 500 ns
Turn–Off Time
NTE2428
t
off
– – 1000 ns
NTE2429 – – 650 ns
Note 2. Measured under pulsed conditions.
.174 (4.42)
.015 (0.32)
.059 (1.5)
.020 (.508)
.059 (1.5)
.067 (1.7)
ECB
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min
.118 (3.0)
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