NTE NTE241, NTE242 Datasheet
NTE241 (NPN) & NTE242 (PNP)
Silicon Complementary Transistors
Audio Power Amplifier, Switch
Description:
The NTE241 ( NPN) a nd N TE242 ( PNP) a re s ilicon c omplementary t ransistors i n a TO220 t ype p ackage
designed for use in power amplifier and switching circuits.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Power Dissipation (T
CEO
CB
EB
= +25°C), P
C
D
Derate Above 25°C 320mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Θ
JC
3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CEX
I
CBO
EBO
= 100mA, IB = 0, Note 1 80 – – V
VCE = 80V, IB = 0 – – 1.0 mA
VCE = 80V, V
VCE = 80V, V
VCB = 80V, IE = 0 – – 0.1 mA
VBE = 5V, IC = 0 – – 1.0 mA
= 1.5V – – 0.1 mA
EB(off)
= 1.5V, TC = +125°C – – 2.0 mA
EB(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Dynamic Characteristics
Small–Signal Current Gain h
Current–Gain Bandwidth Product f
CE(sat)IC
BE(on)IC
FE
IC = 1.5A, VCE = 2V 20 – 80
IC = 4.0A, VCE = 2V 7 – –
= 1.5A, IB = 150mA – – 0.6 V
IC = 4.0A, IB = 1A – – 1.4 V
= 1.5A, VCE = 2V – – 1.2 V
IC = 100mA, VCE = 2V, f = 1kHz 25 – –
fe
IC = 1A, VCE = 4V, f = 1MHz 2.5 – – MHz
T
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab
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