NTE NTE2413 Datasheet
NTE2413
Silicon PNP Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2412)
Description:
The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I
C
CBO
EBO
= 2.7kΩ), V
BE
CER
Continuous 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
≤ +35°C, Note 1), P
A
J
stg
thJT
tot
thTS
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate 2.5cm
2
x 0.7mm.
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thSA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
260K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Collector–Emitter Saturation Voltage V
DC Current Gain h
Transition Frequency f
Capacitance C
(TJ = +25°C unless otherwise specified)
CBO
I
CER
CE(sat)IC
FE
T
VCB = 200V, IE = 0 – – 10 nA
VCE = 250V, RBE = 2.7kΩ – – 50 nA
VCE = 200V, RBE = 2.7kΩ,
T
VCE = 20V, IC = 25mA 50 – –
VCE = 10V, IE = 10mA,
f = 35MHz
VCE = 30V, IC = 0, f = 1MHz – – 1.6 pF
re
– – 10 µA
= +150°C
J
= 30mA, IB = 5mA – – 0.8 V
60 – – MHz
.016 (0.48)
B
.074 (1.9)
.118 (3.0) Max
C
E
.037 (0.95)
.007 (0.2)
.098
(2.5)
Max
.051
(1.3)
.043 (1.1)
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