NTE NTE2413 Datasheet

NTE2413

Silicon PNP Transistor

General Purpose, High Voltage Amp,

(Compl to NTE2412)

Description:

The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I

C

CBO

EBO

= 2.7kΩ), V

BE

CER

Continuous 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R

Thermal Resistance, Tab–to–Soldering Points, R

≤ +35°C, Note 1), P

A

J

stg

thJT

tot

thTS

Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
Note 1. Mounted on a ceramic substrate 2.5cm

2

x 0.7mm.

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thSA

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

260K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Collector–Emitter Saturation Voltage V
DC Current Gain h
Transition Frequency f

Capacitance C

(TJ = +25°C unless otherwise specified)

CBO

I

CER

CE(sat)IC

FE

T

VCB = 200V, IE = 0 – – 10 nA
VCE = 250V, RBE = 2.7kΩ – – 50 nA
VCE = 200V, RBE = 2.7kΩ,

T

VCE = 20V, IC = 25mA 50 – –
VCE = 10V, IE = 10mA,

f = 35MHz
VCE = 30V, IC = 0, f = 1MHz – – 1.6 pF

re

– – 10 µA

= +150°C

J

= 30mA, IB = 5mA – – 0.8 V

60 – – MHz

.016 (0.48)

B

.074 (1.9)

.118 (3.0) Max

C

E

.037 (0.95)

.007 (0.2)

.098

(2.5)

Max

.051

(1.3)

.043 (1.1)