NTE2412
Silicon NPN Transistor
General Purpose, High Voltage Amp,
(Compl to NTE2413)
Description:
The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use
primarily in telephone and professional communication equipment.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
Collector Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Emitter Saturation Voltage V
DC Current Gain h
Transition Frequency f
(TA = +25°C unless otherwise specified)
CBO
CEO
C
J
stg
(TA = +25°C unless otherwise specified)
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
EBO
CE(sat)IC
FE
T
VCB = 200V – – 0.5 µA
VEB = 4V – – 0.5 µA
VCE = 10V, IC = 10mA 56 – 120
VCE = 30V, IE = 10mA,
f = 100MHz
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50µA 300 – – V
= 100µA 300 – – V
= 50µA 5 – – V
= 50mA, IB = 5mA – – 2.0 V
50 100 – MHz
Capacitance C
ob
VCB = 30V, IE = 0, f = 1MHz – 3 – pF