NTE NTE2411 Datasheet

NTE2411

Silicon PNP Transistor

High Voltage Amp/Driver

(Compl to NTE2410)

Description:

The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in
high voltage applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T

CEO

CBO

EBO

C

= +25°C, FR–5 Board, Note 1), P

A

Derate Above 25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient, R
Total Power Dissipation (T

= +25°C, Alumina Substrate, Note 2), P

A

Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient, R
Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

thJA

thJA

D

556°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

417°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

225mW. . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . .

Note 1. FR–5 = 1.0 x 0.75 x 0.62 in.
Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

= 1mA, IB = 0 150 – – V
= 100µA, IE = 0 160 – – V

= 10µA, IC = 0 5 – – V
VCB = 100V, IE = 0 – – 50 nA
VCB = 100V, IE = 0, TA = +100°C – – 50 µA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Small Signal Current gain h
Noise Figure NF IC = 200µA, VCE = 5V, RS = 10Ω,

FE

CE(sat)IC

BE(sat)IC

obo

IC = 1mA, VCE = 5V 50 – –
IC = 10mA, VCE = 5V 60 – 240
IC = 50mA, VCE = 5V 50 – –

= 10mA, IB = 1mA – – 1.0 V
IC = 50mA, IB = 5mA – – 1.0 V

= 10mA, IB = 1mA – – 1.0 V
IC = 50mA, IB = 5mA – – 1.0 V

IC = 10mA, VCE = 10V, f = 100MHz 100 – 300 MHz

T

VCB = 10V, IE = 0, f = 1MHz – – 6 pF
IC = 1mA, VCE = 10V, f = 1kHz 40 – 200

fe

f = 10Hz to 15.7kHz

.016 (0.48)

– – 8 dB

B

.074 (1.9)

.118 (3.0) Max

C

E

.037 (0.95)

.007 (0.2)

.098

(2.5)

Max

.051

(1.3)

.043 (1.1)