NTE NTE2410 Datasheet
NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T
CEO
CBO
EBO
C
= +25°C, FR–5 Board, Note 1), P
A
Derate Above 25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
Total Power Dissipation (T
= +25°C, Alumina Substrate, Note 2), P
A
Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
thJA
thJA
D
556°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
417°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
225mW. . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . .
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CBO
EBO
= 1mA, IB = 0, Note 3 160 – – V
= 100µA, IE = 0 180 – – V
= 10µA, IC = 0 6 – – V
VCB = 120V, IE = 0 – – 50 nA
VCB = 120V, IE = 0, TA = +100°C – – 50 µA
VEB = 4V, IC = 0 – – 50 nA
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
FE
CE(sat)IC
BE(sat)IC
IC = 1mA, VCE = 5V 80 – –
IC = 10mA, VCE = 5V 80 – 250
IC = 50mA, VCE = 5V 30 – –
= 10mA, IB = 1mA – – 0.15 V
IC = 50mA, IB = 5mA – – 0.20 V
= 10mA, IB = 1mA – – 1.0 V
IC = 50mA, IB = 5mA – – 1.0 V
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.016 (0.48)
C
.098
(2.5)
B
E
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.051
(1.3)
.043 (1.1)
.007 (0.2)
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