NTE NTE2410 Datasheet

NTE2410

Silicon NPN Transistor

High Voltage Amp/Driver

(Comp to NTE2411)

Description:

The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T

CEO

CBO

EBO

C

= +25°C, FR–5 Board, Note 1), P

A

Derate Above 25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient, R
Total Power Dissipation (T

= +25°C, Alumina Substrate, Note 2), P

A

Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient, R
Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

J

thJA

thJA

D

556°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

D

417°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

160V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

180V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

225mW. . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . .

Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CEOIC
(BR)CBOIC
(BR)EBOIE

CBO

EBO

= 1mA, IB = 0, Note 3 160 – – V
= 100µA, IE = 0 180 – – V

= 10µA, IC = 0 6 – – V
VCB = 120V, IE = 0 – – 50 nA
VCB = 120V, IE = 0, TA = +100°C – – 50 µA
VEB = 4V, IC = 0 – – 50 nA

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

FE

CE(sat)IC

BE(sat)IC

IC = 1mA, VCE = 5V 80 – –
IC = 10mA, VCE = 5V 80 – 250
IC = 50mA, VCE = 5V 30 – –

= 10mA, IB = 1mA – – 0.15 V
IC = 50mA, IB = 5mA – – 0.20 V

= 10mA, IB = 1mA – – 1.0 V
IC = 50mA, IB = 5mA – – 1.0 V

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

.016 (0.48)

C

.098

(2.5)

B

E

Max

.074 (1.9)

.118 (3.0) Max

.037 (0.95)

.051

(1.3)

.043 (1.1)

.007 (0.2)