NTE NTE2409 Datasheet
NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CBO
CEX
CEO
EBO
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Emitter Current, I
Peak Base Current, I
Total Power Dissipation (TA = +60°C, Note 1), P
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R
EM
BM
tot
J
stg
thJT
thTS
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R
–65 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thSA
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
280K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90K/W. . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Base–Emitter Voltage V
Collector–Emitter Saturation Voltage V
(TJ = +25°C unless otherwise specified)
CBO
BE
CE(sat)IC
VCB = 30V, IE = 0 – 1 15 nA
VCB = 30V, IE = 0, TJ = +150°C – – 4 µA
VCE = 5V, IC = 2mA, Note 2 600 650 750 mV
VCE = 5V, IC = 10mA, Note 2 – – 820 mV
= 10mA, IB = 0.5mA, Note 3 – 75 300 mV
IC = 100mA, IB = 5mA, Note 3 – 250 650 mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. V
BE(sat)
decreases by about 1.7mV with increasing temperature.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Base–Emitter Saturation Voltage V
DC Current Gain h
Transition Frequency f
Collector Capacitance C
Small–Signal Current Gain h
Noise Figure NF VCE = 5V, IC = 200µA, f = 1kHz,
BE(sat)IC
FE
T
c
fe
= 10mA, IB = 0.5mA, Note 3 – 700 – mV
IC = 100mA, IB = 5mA, Note 3 – 850 – mV
VCE = 5V, IC = 2mA 220 – 475
VCE = 5V, IC = 10mA, f = 35MHz – 150 – MHz
VCB = 10V, IE = Ie = 0, f = 1MHz – 4.5 – pF
VCE = 5V, IC = 2mA 75 – 900
– 2 10 dB
B = 200Hz, R
= 2kΩ
S
Note 3. V
BE(sat)
decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C
.098
(2.5)
B
E
Max
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
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