NTE NTE2408 Datasheet

NTE2408

Silicon NPN Transistor

General Purpose Amp, Surface Mount

(Compl to NTE2409)

Description:

The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CBO

CES
CEO

EBO

Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak Emitter Current, I
Peak Base Current, I
Total Power Dissipation (TA = +60°C, Note 1), P
Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Tab, R
Thermal Resistance, Tab–to–Soldering Points, R

EM

BM

tot

J

stg

thJT

thTS

Thermal Resistance, Soldering Points–to–Ambient (Note 1), R

–65 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thSA

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

280K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

90K/W. . . . . . . . . . . . . . . . . . . .

Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Base–Emitter Voltage V

Collector–Emitter Saturation Voltage V

(TJ = +25°C unless otherwise specified)

CBO

BE

CE(sat)IC

VCB = 30V, IE = 0 – – 15 nA
VCB = 30V, IE = 0, TA = +150°C – – 5 µA
VCE = 5V, IC = 2mA, Note 2 580 660 700 mV
VCE = 5V, IC = 10mA, Note 2 – – 770 mV

= 10mA, IB = 0.5mA, Note 3 – 90 250 mV

IC = 100mA, IB = 5mA, Note 3 – 200 600 mV

Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. V

BE(sat)

decreases by about 1.7mV with increasing temperature.

Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Base–Emitter Saturation Voltage V

DC Current Gain h

Transition Frequency f
Collector Capacitance C
Small–Signal Current Gain h
Noise Figure NF VCE = 5V, IC = 200µA, f = 1kHz,

BE(sat)IC

FE

T

c

fe

= 10mA, IB = 0.5mA, Note 3 – 700 – mV
IC = 100mA, IB = 5mA, Note 3 – 900 – mV
VCE = 5V, IC = 10µA – 150 200
VCE = 5V, IC = 2mA – 290 450
VCE = 5V, IC = 10mA, f = 35MHz – 300 – MHz
VCB = 10V, IE = Ie = 0, f = 1MHz – 2.5 – pF
VCE = 5V, IC = 2mA 125 – 500

– 2 10 dB

B = 200Hz

Note 3. V

BE(sat)

decreases by about 1.7mV with increasing temperature.

.016 (0.48)

C

.098

(2.5)

B

E

Max

.037 (0.95)

.074 (1.9)

.118 (3.0) Max

.051

(1.3)

.043 (1.1)

.007 (0.2)