NTE NTE2407 Datasheet

NTE2407

Silicon PNP Transistor

General Purpose Amp, Surface Mount

(Compl to NTE2406)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (FR–5 Board, Note 1), P

Derate above +25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
Total Device Dissipation (Alumina Substrate, Note 2), P

Derate above +25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T

Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.

CBO

EBO

CEO

C

stg

D

thJA

D

thJA

J

–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

225mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

556°C/W. . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .

417°C/W. . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Base Current I

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO

I

CEX

B

= 10µA, IE = 0 60 – – V
= 10mA, IB = 0, Note 3 60 – – V

= 10µA, IC = 0 5 – – V
VCB = 50V, IE = 0 – – 0.01 µA
VCB = 50V, IE = 0, TA = +125°C – – 10 µA
VCE = 30V, V
VCE = 30V, V

EB(off)
EB(off)

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

= 0.5V – – 50 nA
= 0.5V – – 50 nA

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Small–Signal Characteristics

Current Gain–Bandwidth Product f

Output Capacitance C
Input Capacitance C

Switching Characteristics

Turn–On Time t
Delay Time t
Rise Time t
Turn–On Time t
Delay Time t
Rise Time t

FE

T

obo

ibo

on

d

off

s

VCE = 10V, IC = 0.1mA 35 – –
VCE = 10V, IC = 1mA 50 – –
VCE = 10V, IC = 10mA 100 – –
VCE = 10V, IC = 150mA 100 – 300
VCE = 10V, IC = 500mA 50 – –

= 150mA, IB = 15mA – – 0.4 V

IC = 500mA, IB = 50mA – – 1.6 V

= 150mA, IB = 15mA – – 1.3 V

IC = 500mA, IB = 50mA – – 2.6 V

IC = 50mA, VCE = 20V,

300 – – MHz

f = 100MHz, Note 3
VCB = 10V, IE = 0, f = 1MHz – – 8 pF
VEB = 2V, IC = 0, f = 1MHz – – 30 pF

VCC = 30V, IC = 150mA,
IB1 = 15mA

r

VCC = 6V, IC = 150mA,
IB1 = IB2 = 15mA

f

– – 45 ns
– – 10 ns
– – 40 ns
– – 100 ns
– – 80 ns
– – 30 ns

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

.016 (0.48)

B

.074 (1.9)

.118 (3.0) Max

C

E

.098

(2.5)

Max

.037 (0.95)

.043 (1.1)

.051
(1.3)

.007 (0.2)