NTE NTE2407 Datasheet
NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (FR–5 Board, Note 1), P
Derate above +25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
Total Device Dissipation (Alumina Substrate, Note 2), P
Derate above +25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
CBO
EBO
CEO
C
stg
D
thJA
D
thJA
J
–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
225mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
556°C/W. . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .
417°C/W. . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
Base Current I
(TA = +25°C unless otherwise specified)
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
CBO
I
CEX
B
= 10µA, IE = 0 60 – – V
= 10mA, IB = 0, Note 3 60 – – V
= 10µA, IC = 0 5 – – V
VCB = 50V, IE = 0 – – 0.01 µA
VCB = 50V, IE = 0, TA = +125°C – – 10 µA
VCE = 30V, V
VCE = 30V, V
EB(off)
EB(off)
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
= 0.5V – – 50 nA
= 0.5V – – 50 nA
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
CE(sat)IC
BE(sat)IC
Small–Signal Characteristics
Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C
Switching Characteristics
Turn–On Time t
Delay Time t
Rise Time t
Turn–On Time t
Delay Time t
Rise Time t
FE
T
obo
ibo
on
d
off
s
VCE = 10V, IC = 0.1mA 35 – –
VCE = 10V, IC = 1mA 50 – –
VCE = 10V, IC = 10mA 100 – –
VCE = 10V, IC = 150mA 100 – 300
VCE = 10V, IC = 500mA 50 – –
= 150mA, IB = 15mA – – 0.4 V
IC = 500mA, IB = 50mA – – 1.6 V
= 150mA, IB = 15mA – – 1.3 V
IC = 500mA, IB = 50mA – – 2.6 V
IC = 50mA, VCE = 20V,
300 – – MHz
f = 100MHz, Note 3
VCB = 10V, IE = 0, f = 1MHz – – 8 pF
VEB = 2V, IC = 0, f = 1MHz – – 30 pF
VCC = 30V, IC = 150mA,
IB1 = 15mA
r
VCC = 6V, IC = 150mA,
IB1 = IB2 = 15mA
f
– – 45 ns
– – 10 ns
– – 40 ns
– – 100 ns
– – 80 ns
– – 30 ns
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.016 (0.48)
B
.074 (1.9)
.118 (3.0) Max
C
E
.098
(2.5)
Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)
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