NTE NTE2406 Datasheet

NTE2406

Silicon NPN Transistor

General Purpose Amp, Surface Mount

(Compl to NTE2407)

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (FR–5 Board, Note 1), P

Derate above +25°C 1.8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
Total Device Dissipation (Alumina Substrate, Note 2), P

Derate above +25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T

Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.

CBO

EBO

CEO

C

stg

D

thJA

D

thJA

J

–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55 ° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

600mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

225mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

556°C/W. . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . .

417°C/W. . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I

Emitter Cutoff Current I
Base Cutoff Current I

(TA = +25°C unless otherwise specified)

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO

I

CEX
EBO

BL

VCB = 60V, IE = 0 – – 0.01 µA
VCB = 60V, IE = 0, TA = +125°C – – 10 µA
VCE = 60V, V
VEB = 3V, IC = 0 – – 10 nA
VCE = 60V, V

= 10µA, IE = 0 75 – – V
= 10mA, IB = 0 40 – – V
= 10µA, IC = 0 6 – – V

= 3V – – 10 nA

EB(off)

= 3V – – 20 nA

EB(off)

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

FE

CE(sat)IC

BE(sat)IC

Small–Signal Characteristics

Current Gain–Bandwidth Product f
Output Capacitance C
Input Capacitance C

T

obo

ibo

Input Impedance h

Voltage Feedback Ratio h

Small–Signal Current Gain h

Output Admittance h

re

fe

oe

Collector–Base Time Constant rb’C
Noise Fiqure NF IC = 100µA, VCE = 10V,

Switching Characteristics

Delay Time t

d

Rise Time t
Storage Time t

s

Fall Time t

VCE = 10V, IC = 0.1mA 35 – –
VCE = 10V, IC = 1mA 50 – –
VCE = 10V, IC = 10mA 75 – –
VCE = 10V, IC = 10mA, TA = –55°C 35 – –
VCE = 1V, IC = 150mA 50 – –
VCE = 10V, IC = 150mA 100 – 300
VCE = 10V, IC = 500mA 40 – –

= 150mA, IB = 15mA – – 0.3 V

IC = 500mA, IB = 50mA – – 1.0 V

= 150mA, IB = 15mA 0.6 – 1.2 V

IC = 500mA, IB = 50mA – – 2.0 V

IC = 20mA, VCB = 20V, f = 100MHz 300 – – MHz
VCB = 10V, IE = 0, f = 1MHz – – 8 pF
VEB = 0.5V, IC = 0, f = 1MHz – – 25 pF
VCE = 10V, IC = 1mA, f = 1kHz 2 – 8 kΩ

ie

VCE = 10V, IC = 10mA, f = 1kHz 0.25 – 1.25 kΩ
VCE = 10V, IC = 1mA, f = 1kHz – – 8 x 10
VCE = 10V, IC = 10mA, f = 1kHz – – 4 x 10
VCE = 10V, IC = 1mA, f = 1kHz 50 – 300
VCE = 10V, IC = 10mA, f = 1kHz 75 – 375
VCE = 10V, IC = 1mA, f = 1kHz 5 – 35 µmhos
VCE = 10V, IC = 10mA, f = 1kHz 25 – 200 µmhos
VCB = 20V, IE = 20mA, f = 31.8MHz – – 150 ps

c

– – 4 dB

= 1kΩ,,f = 1kHz

R

S

VCC = 30V, IC = 150mA,
V

r

= 0.5V, IB1 = 15mA

BE(off)

VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA

f

– – 10 ns
– – 25 ns
– – 225 ns
– – 60 ns

4
4

Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.