NTE NTE2404 Datasheet
NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CBO
EBO
Continuous 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 800mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
B
= +25°C, Note 1), P
A
J
stg
D
Thermal Resistance, Junction to Ambient (Note 1), R
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
350K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Current I
Emitter–Base Current I
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
DC Current Gain h
Transition Frequency f
Collector Capacitance C
(TA = +25°C unless otherwise specified)
V
CBO
EBO
(BR)CEOIC
(BR)CBOIC
(BR)EBOIE
CE(sat)IC
BE(sat)IC
FE
T
c
= 30V – – 100 nA
CBO
VEB = 10V – – 100 nA
= 10mA 30 – – V
= 10µA 40 – – V
= 100nA 10 – – V
= 100mA, IB = 0.1mA – – 1 V
= 100mA, IB = 0.1mA – – 1.5 V
IC = 1mA, VCE = 5V 4000 – –
IC = 10mA, VCE = 5V 10000 – –
IC = 100mA, VCE = 5V 20000 – –
IC = 30mA, VCE = 5V, f = 100MHz – 220 – MHz
IE = 0, VCB = 30V – 3.5 – pF
Schematic Diagram
C
B
E
NPN PNP
B
C
E
.016 (0.48)
B
.074 (1.9)
.118 (3.0) Max
C
E
.037 (0.95)
.007 (0.2)
.098
(2.5)
Max
.051
(1.3)
.043 (1.1)
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