NTE NTE2402, NTE2403 Datasheet

NTE2402 (NPN) & NTE2403 (PNP)

Silicon Complementary Transistors

Low Noise, UHF/VHF Amplifier

Description:

The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir­cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran­sistors feature low intermodulation distortion and high power gain. Due to very high transition fre­quency, these devices also have excellent wideband properties and low noise up to high frequencies.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

≤ +60°C, Note 1), P

A

J

stg

tot

Thermal Resistance, Junction–to–Ambient (Note 1), R

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
DC Current Gain h
Transition Frequency f
Collector Capacitance C
Emitter Capacitance C
Feedback Capacitance C

(TJ = +25°C unless otherwise specified)

CBO

FE

VCB = 10V, IE = 0 – – 50 nA
VCE = 10V, IC = 14mA 25 50 –
VCE = 10V, IC = 14mA, f = 500MHz – 5 – GHz

T

VCB = 10V, IE = Ie = 0, f = 1MHz – 0.75 – pF

c

VEB = 0.5V, IC = Ic = 0, f = 1MHz – 0.8 – pF

e

VCE = 10V, IC = 2mA, f = 1MHz,

re

T

= +25°C

A

– 0.4 – pF

Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Noise Figure (At Optimum

Source Impedance)

Max. Unilateral Power Gain

(s

Assumed to be Zero)

re

Output Voltage

(At d

= –60dB)

im

F VCE = 10V, IC = 2mA, f = 500MHz,

T

= +25°C

A

G

UM

V

VCE = 10V, IC = 2mA, f = 500MHz,
T

= +25°C, Note 2

A

VCE = 10V, IC = 14mA, RL = 75Ω,

O

T

= +25°C, f

A

Note 2. GUM = 10 log |sfe|2 / [1 – |sie|2] [1 – |soe|2].

.016 (0.48)

C

B

E

(p+q–r)

.098

(2.5)

Max

– 2.4 – dB

– 18 – dB

– 150 – mV

= 493,25MHz

.074 (1.9)

.118 (3.0) Max

.037 (0.95)

.051

(1.3)

.043 (1.1)

.007 (0.2)