NTE NTE2401 Datasheet

NTE2401

Silicon PNP Transistor

RF Stages in FM Front Ends

Description:

The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient (Note 1), R

CBO

CEO

EBO

C

≤ +25°C, Note 1), P

A

J

stg

tot

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJA

Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitterr Cutoff Current I
Base Current I

Base–Emitter Voltage V
Transition Frequency f

Feedback Capacitance C
Noise Factor F VCE = 10V, IC = 2mA, Gs = 16.7mS – 3.0 – dB

(TJ = +25°C unless otherwise specified)

CBO
EBO

VCB = 30V, IE = 0 – – 50 nA
VEB = 4V, IC = 0 – – 10 µA
VCE = 10V, IC = 4mA – 80 160 µA

B

VCE = 10V, IC = 1mA – 22 – µA
VCE = 10V, IC = 4mA – 0.76 – V

BE

VCE = 10V, IC = 1mA – 350 – MHz

T

VCE = 10V, IC = 4mA – 450 – MHz
VCE = 10V, IC = 8mA – 440 – MHz
VCE = 10V, VEB = 0 – 0.1 – pF

rb

VCE = 10V, IC = 5mA, Gs = 6.7mS,
jB

= 5mS

s

– 3.5 – dB

Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

y–parameters (common base)

Input Conductance g

Input Capacitance C
Transfer Admittance |yfb| – 100 – mS
Phase Angle of Transfer Admittance ϕ
Output Conductance g
Output Capacitance C
Feedback Admittance |yrb| – 220 – µS
Phase Angle of Feedback Admittance ϕ

VCB = 10V, IC = 4mA,

ib

f = 100MHz

ib

fb
ob
ob

rb

– 125 – mS

– 64 – pF

– 147 – °
– 40 – µS
– 1.25 – pF

– 85 – °

.016 (0.48)

B

.074 (1.9)

.118 (3.0) Max

C

E

.037 (0.95)

.007 (0.2)

.098

(2.5)

Max

.051

(1.3)

.043 (1.1)