NTE NTE2401 Datasheet
NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
DC Collector Current, I
Total Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient (Note 1), R
CBO
CEO
EBO
C
≤ +25°C, Note 1), P
A
J
stg
tot
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
430K/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitterr Cutoff Current I
Base Current I
Base–Emitter Voltage V
Transition Frequency f
Feedback Capacitance C
Noise Factor F VCE = 10V, IC = 2mA, Gs = 16.7mS – 3.0 – dB
(TJ = +25°C unless otherwise specified)
CBO
EBO
VCB = 30V, IE = 0 – – 50 nA
VEB = 4V, IC = 0 – – 10 µA
VCE = 10V, IC = 4mA – 80 160 µA
B
VCE = 10V, IC = 1mA – 22 – µA
VCE = 10V, IC = 4mA – 0.76 – V
BE
VCE = 10V, IC = 1mA – 350 – MHz
T
VCE = 10V, IC = 4mA – 450 – MHz
VCE = 10V, IC = 8mA – 440 – MHz
VCE = 10V, VEB = 0 – 0.1 – pF
rb
VCE = 10V, IC = 5mA, Gs = 6.7mS,
jB
= 5mS
s
– 3.5 – dB
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
y–parameters (common base)
Input Conductance g
Input Capacitance C
Transfer Admittance |yfb| – 100 – mS
Phase Angle of Transfer Admittance ϕ
Output Conductance g
Output Capacitance C
Feedback Admittance |yrb| – 220 – µS
Phase Angle of Feedback Admittance ϕ
VCB = 10V, IC = 4mA,
ib
f = 100MHz
ib
fb
ob
ob
rb
– 125 – mS
– 64 – pF
– 147 – °
– 40 – µS
– 1.25 – pF
– 85 – °
.016 (0.48)
B
.074 (1.9)
.118 (3.0) Max
C
E
.037 (0.95)
.007 (0.2)
.098
(2.5)
Max
.051
(1.3)
.043 (1.1)
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