NTE191 (NPN) & NTE240 (PNP)
Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type
package designed for high–voltage video and luminance output stages in TV receivers.
Features:
D High Collector–Emitter Breakdown Voltage: V
D Low Collector–Emitter Saturation Voltage: V
D Low Collector–Base Capacitance: C
= 3pF (Max) @ VCB = 20V
cb
(BR)CEO
CE(sat)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
CEO
CB
EBO
NTE191 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE240 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
Total Device Dissipation (T
C
= +25°C), P
A
D
Derate Above 25°C 8mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
= +25°C), P
C
D
Derate Above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
Thermal Resistance, Junction–to–Ambient (Note 2), R
Note 1. NTE191 is a discontinued device and no longer available.
Note 2. R
is measured with the device soldered into a typical printed circuit board.
thJA
= 300V (Min) @ IC = 1mA
= 0.75V (Max) @ IC = 30mA
thJA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage
NTE191
NTE240 5 – – V
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
V
(BR)EBO
= 1mA, IB = 0, Note 3 300 – – V
= 100µA, IE = 0 300 – – V
IE = 100µA, IC = 0
6 – – V
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Cont’d)
Collector Cutoff Current I
Emitter Cutoff Current I
CBO
EBO
VCB = 200V, IE = 0 – – 0.2 µA
VBE = 6V, IC = 0 – – 0.1 µA
ON Characteristics
DC Current Gain (NTE191 & NTE240) h
FE
IC = 1mA, VCE = 10V, Note 3 25 – –
NTE191 IC = 10mA, VCE = 10V, Note 3 40 – –
IC = 30mA, VCE = 10V, Note 3 40 – –
NTE240 IC = 10mA, VCE = 10V, Note 3 30 – –
IC = 30mA, VCE = 10V, Note 3 30 – –
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage
NTE191
CE(sat)IC
V
BE(on)
= 30mA, IB = 3mA – – 0.75 V
IC = 30mA, VCE = 10V
– – 0.85 V
NTE240 – – 0.90 V
Dynamic Characteristics
Current Gain–Bandwidth Product
NTE191
NTE240
Collector–Base Capacitance
NTE191
f
T
IC = 10mA, VCE = 20V,
f = 100MHz, Note 2
C
cb
VCB = 20V, IE = 0, f = 1MHz
45 – – MHz
60 – – MHz
– – 3.0 pF
NTE240 – – 8.0 pF
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.65) Max
.160
(4.06)
.100 (2.54)
.218
(5.55)
.475
(12.0)
Min
.100 (2.54)
EBC
.280 (7.25) Max
.128 (3.28) Dia
.995
(25.3)
.200 (5.08)
.050 (1.27)
Collector Connected to Tab