NTE NTE2397 Datasheet
NTE2397
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), I
TC = +25°C 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +100°C 6.3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
Pulsed Drain Current (Note 1), I
Power Dissipation (T
= +25°C), P
C
DM
D
Derate Linearly Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–to–Source Voltage, V
GS
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
AR
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 4V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
Mounting Torque (6–32 or M3 Screw) 10 lbfin (1.1Nm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
D
AR
AS
J
thJC
thJA
L
thCS
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5°C/W. . . . . . . . . . . .
40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
520mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . . . .
62°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I
= 50V, starting TJ = +25°C, L = 9.1µH, RG = 25Ω, IAS = 10A
DD
≤ 10A, di/dt ≤ 120A/µs, VDD ≤ V
SD
(BR)DSS
, TJ ≤ +150°C
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–to–Source Breakdown Voltage V
Breakdown Voltage Temp. Coefficient ∆V
(BR)DSSVGS
(BR)DSS
∆T
Static Drain–to–Source On–Resistance R
Gate Threshold Voltage V
DS(on)
GS(th)
Forward Transconductance g
Drain–to–Source Leakage Current I
Gate–to–Source Forward Leakage I
Gate–to–Source Reverse Leakage I
DSS
GSS
GSS
Total Gate Charge Q
Gate–to–Source Charge Q
Gate–to–Drain (“Miller”) Charge Q
Turn–On Delay Time t
d(on)
Rise Time t
Turn–Off Delay Time t
d(off)
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capaticance C
fs
gs
gd
r
f
D
S
iss
oss
rss
= 0V, ID = 250µA 400 – – V
Reference to +25°C, ID = 1mA – 0.49 – V/°C
J
VGS = 10V, ID = 6A, Note 4 – – 0.55 Ω
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 50V, ID = 6A, Note 4 5.8 – – mhos
VDS = 400V, VGS = 0V – – 25 µA
VDS = 320V, VGS = 0V, TJ = +125°C – – 250 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
ID = 10A, VDS = 320V, VGS = 10V,
g
Note 4
– – 63 nC
– – 9.0 nC
– – 32 nC
VDD = 200V, ID = 10A, RG = 9.1Ω,
RD = 20Ω, Note 4
– 14 – ns
– 27 – ns
– 50 – ns
– 24 – ns
Between lead, .250in. (6.0) m m from
package and center of die contact
VGS = 0V, VDS = 25V, f = 1MHz
– 4.5 – nH
– 7.5 – nH
– 1400 – pF
– 330 – pF
– 120 – pF
Source–Drain Ratings and Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V
S
SM
SD
Note 1 – – 40 A
TJ = +25°C, IS = 10A, VGS = 0V,
– – 10 A
– – 2.0 V
Note 4
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t
on
TJ = +25°C, IF = 10A,
rr
di/dt = 100A/µs, Note 4
rr
Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)
– 370 790 ns
– 3.8 8.2 µC
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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