NTE NTE2395 Datasheet

NTE2395
MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D +175°C Operating Temperature
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Continuous Drain Current (VGS = 10V), I

TC = +25°C (Note 1) 50A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed Drain Current (Note 2), I
Power Dissipation (T

= +25°C), P

C

DM

D

Derate Linearly Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–to–Source Voltage, V

GS

Single Pulse Avalanche Energy (Note 3), E

Peak Diode Recovery dv/dt (Note 4), dv/dt 4.5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Lead Temperature (During Soldering, 1.6mm from case for 10sec), T

Mounting Torque (6–32 or M3 Screw) 10 lbfin (1.1Nm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R

D

AS

J

thJC

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

thJA

thCS

200A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . .

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . . . . . . . .

Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 3. V
Note 4. I

= 25V, starting TJ = +25°C, L = 44µH, RG = 25Ω, IAS = 51A

DD

≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V

SD

(BR)DSS

, TJ ≤ +175°C

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–to–Source Breakdown Voltage V
Breakdown Voltage Temp. Coefficient ∆V

(BR)DSSVGS

(BR)DSS

∆T

Static Drain–to–Source On–Resistance R
Gate Threshold Voltage V

DS(on)
GS(th)

Forward Transconductance g
Drain–to–Source Leakage Current I

Gate–to–Source Forward Leakage I
Gate–to–Source Reverse Leakage I

DSS

GSS
GSS

Total Gate Charge Q
Gate–to–Source Charge Q
Gate–to–Drain (“Miller”) Charge Q
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capaticance C

fs

gs
gd

r

f
D
S

iss

oss

rss

= 0V, ID = 250µA 60 – – V

Reference to +25°C, ID = 1mA – 0.060 – V/°C

J

VGS = 10V, ID = 31A, Note 5 – – 0.028 Ω
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 25V, ID = 31A, Note 5 15 – – mhos
VDS = 60V, VGS = 0V – – 25 µA
VDS = 48V, VGS = 0V, TJ = +125°C – – 250 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
ID = 51A, VDS = 48V, VGS = 10V,

g

Note 5

– – 67 nC
– – 18 nC
– – 25 nC

VDD = 30V, ID = 51A, RG = 9.1Ω,
RD = 0.55Ω, Note 5

– 14 – ns
– 110 – ns
– 45 – ns
– 92 – ns

Between lead, .250in. (6.0) m m from
package and center of die contact

VGS = 0V, VDS = 25V, f = 1MHz

– 4.5 – nH
– 7.5 – nH
– 1900 – pF
– 920 – pF
– 170 – pF

Source–Drain Ratings and Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V

SM

Note 1 – – 50 A

S

Note 2 – – 200 A
TJ = +25°C, IS = 51A, VGS = 0V,

SD

– – 2.5 V

Note 5
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

TJ = +25°C, IF = 51A,

rr

di/dt = 100A/µs, Note 5

rr

Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)

on

– 120 180 ns
– 0.53 0.80 µC

Note 1. Current limited by the package, (Die Current = 51A).
Note 2. Repetitive rating; pulse width limited by maximum junction temperature.
Note 5. Pulse width ≤ 300µs; duty cycle ≤ 2%.