NTE NTE2394 Datasheet
NTE2394
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2394 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D High Voltage: 450V for Off–Line SMPS
D High Current: 12A for up to 350W SMPS
D Ultra Fast Switching for Operation at less than 100kHz
Industrial Applications:
D Switching Mode Power Supplies
D Motor Controls
Absolute Maximum Ratings:
Drain–Source Voltage (VGS = 0, Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Pulsed Drain Current (Note 2), I
= 20kΩ, Note 1), V
GS
GS
DM
Clamped Drain Inductive Current (L = 100µH), I
Continuous Drain Current, I
D
DS
DGR
DLM
TC = +25°C 14A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +100°C 8.8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Total Dissipation (T
= +25°C), P
C
tot
Derate Above 25°C 1.44W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Operating Junction Temperature, T
Storage Temperature Range, T
Note 1. T
= +25° to +125°C
J
stg
J
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
56A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
56A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Data:
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink, R
thCS
thJC
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During Soldering), T
L
thJA
0.69°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
0.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I
Gate–Body Leakage Current I
ON Characteristics (Note 3)
Gate Threshold Voltage V
On–State Drain Current I
Static Drain–Source On Resistance R
Dynamic Characteristics
Forward Transconductance g
Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C
Switching Characteristics
(BR)DSSID
DSS
VGS = 0, VDS = Max Rating – – 250 µA
VGS = 0, VDS = 400V,
T
GSS
GS(th)
D(on)
VDS = 0, VGS = ±20V – – ±500 nA
VDS = VGS, ID = 250µA 2 – 4 V
VDS > I
V
DS(on)VGS
fs
VDS > I
I
iss
oss
rss
VDS = 25V, VGS = 0,
f = 1MHz
= 250µA, VGS = 0 500 – – V
– – 1000 µA
= +125°C
C
GS
D(on)
= 10V
x R
DS(on) max
,
14 – – A
= 10V, ID = 7.9A – – 0.4 Ω
x R
D(on)
= 7.9A, Note 4
D
DS(on) max
,
9.3 – – mho
– – 3000 pf
– – 600 pf
– – 200 pf
Turn–On Time t
d(on)
Rise Time t
Turn–Off Delay Time t
d(off)
Fall Time t
Total Gate Charge Q
VDD = 210V, ID = 7.0A,
r
f
RI = 4.7Ω
VGS = 10V, ID = 13A,
g
V
DS
= 400V
– – 35 ns
– – 50 ns
– – 150 ns
– – 70 ns
– – 120 nC
Source Drain Diode Characteristics
Source–Drain Current I
Source–Drain Current (Pulsed) I
SDM
Forward ON Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
SD
SD
rr
Note 3 – – 56 A
ISD = 14A, VGS = 0 – – 1.4 V
IDS = 14A, di/dt = 100A/µs,
TJ = +150°C
rr
– – 14 A
– 1300 – ns
– 7.4 – µC
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%
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