NTE NTE2393 Datasheet

NTE2393
MOSFET

N–Channel Enhancement Mode,

High Speed Switch

Description:

The NTE2393 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.

Features:

D High Voltage: 500V for Off–Line SMPS
D High Current: 9A for up to 350W SMPS
D Ultra Fast Switching for Operation at less than 100kHz

Industrial Applications:

D Switching Mode Power Supplies
D Motor Controls

Absolute Maximum Ratings:

Drain–Source Voltage (VGS = 0), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I

= 20kΩ), V

GS

GS

D

DS

DGR

TC = +25°C 9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 5.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Pulsed Drain Current (Note 1), I
Clamped Drain Inductive Current (Note 1), I
Total Dissipation (T

= +25°C), P

C

DM

DLM

tot

Derate Above 25°C 1.2W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Operating Junction Temperature, T
Storage Temperature Range, T

stg

J

Maximum Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (During Soldering), T

L

Note 1. Pulse width limited by safe operating area.

thJC

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage V

(BR)DSSID

Zero–Gate Voltage Drain Current I

Gate–Body Leakage Current I
ON Characteristics (Note 2)
Gate Threshold Voltage V
Static Drain–Source On Resistance R

GS(th)
DS(on)VGS

Dynamic Characteristics

Forward Transconductance g
Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C

Switching Characteristics

DSS

GSS

fs

iss

oss

rss

= 250µA, VGS = 0 500 – – V
VGS = 0, VDS = Max Rating – – 250 µA
VGS = 0, VDS = 400V,

= +125°C

T

C

– – 1000 µA

VDS = 0, VGS = ±20V – – ±100 nA

VDS = VGS, ID = 250µA 2 – 4 V

= 10V, ID = 4.5A – – 0.7 Ω

VGS = 10V, ID = 4.5A,

= 100°C

T

C

– – 1.4 Ω

VDS = 25V, ID = 4.5A 5 – – mho
VDS = 25V, VGS = 0,

– 1600 1900 pf

f = 1MHz

– – 280 pf
– – 170 pf

Turn–On Time t

d(on)

VDD = 250V, ID = 4.5A,
RI = 4.7Ω, VI = 10V

Rise Time t
Turn–Off Delay Time t
Fall Time t

r

d(off)

f

Source Drain Diode Characteristics

Source–Drain Current I
Source–Drain Current (Pulsed) I
Forward ON Voltage V
Reverse Recovery Time t

SD

SDM

SD

rr

Note 2 – – 36 A
ISD = 9A, VGS = 0 – – 1.15 V
IDS = 9A, VGS = 0,

di/dt = 100A/µs

Note 2. Pulse width limited by safe operating area.
Note 3. Pulsed: Pulse Duration = 300µs, Duty Cycle 1.5%

– 30 40 ns
– 40 60 ns
– 130 170 ns
– 30 40 ns

– – 9 A

– 420 – ns