NTE NTE2392 Datasheet
NTE2392
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2392 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Fast Switching
D Low Drive Current
D Ease of Paralleling
D No Second Breakdown
D Excellent Temperature Stability
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
= 20kΩ, Note 1), V
GS
GS
Pulsed Drain Current (Note 3), I
Clamped Inductive Current (L = 100µH), I
Continuous Drain Current, I
D
DS
DGR
DM
LM
TC = +25°C 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +100°C 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Total Dissipation (T
= +25°C), P
C
tot
Derate Above 25°C 1.2W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
J
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink (Note 4), R
Maximum Thermal Resistance, Junction–to–Ambient, R
thJC
thCS
thJA
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . .
0.83°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
0.1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . .
30°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. T
= +25° to +150°C
J
Note 2. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Mounting surface flat, smooth, and greased.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I
Gate–Body Leakage Current I
Gate Threshold Voltage V
On–State Drain Current I
Static Drain–Source On Resistance R
Forward Transconductance g
Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C
Turn–On Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Internal Drain Inductance L
Internal Source Inductance L
(BR)DSSID
DSS
GSS
GS(th)
D(on)
DS(on)VGS
fs
iss
oss
rss
d(on)
r
d(off)
f
g
gs
gd
D
S
Source–Drain Diode Ratings and Characteristics
= 250µA, VGS = 0 100 – – V
VGS = 0, VDS = 100V – – 250 µA
VGS = 0, VDS = 80V,
= +125°C
T
C
– – 1000 µA
VDS = 0, VGS = ±20V – – ±100 nA
VDS = VGS, ID = 250µA 2 – 4 V
VDS > I
= 10V, Note 2
V
GS
D(on)
x R
DS(on) max
,
40 – – A
= 10V, ID = 20A, Note 2 – 0.045 0.055 W
VDS > I
= 20A, Note 2
I
D
VDS = 25V, VGS = 0, f = 1MHz
D(on)
x R
DS(on) max
,
9 11 – mho
– 2000 3000 pf
– 1000 1500 pf
– 350 500 pf
VDD = 24V, ID = 20A, RI = 4.7Ω
– – 35 ns
– – 100 ns
– – 125 ns
– – 100 ns
VGS = 10V, ID = 50A,
VDS = 80V
– 63 120 nC
– 27 – nC
– 36 – nC
Measured between the contact
– 5.0 – nH
screw on header that is closer to
source and gate pins and center of
die
Measured from the source pin,
– 12.5 – nH
6mm (.25 in.) from header
Continuous Source Current
I
S
– – 40 A
(Body Diode)
Pulsed Source Current (Body Diode) I
Forward ON Voltage V
SM
SD
Note 3 – – 160 A
IS = 40A, VGS = 0, TJ = +25°C,
– – 2.5 V
Note 3
Reverse Recovery Time t
Reverse Recovered Charge Q
rr
IF = 40A, diF/dt = 100A/µs,
TJ = +150°C
rr
– 600 – ns
– 3.3 – µC
Note 2. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature.
Loading...