NTE NTE2390 Datasheet

NTE2390
MOSFET

N–Channel Enhancement Mode,

High Speed Switch

Description:

The NTE2390 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.

Features:

D Silicon Gate for Fast Switching Speeds

DSS

, V

DC(on)

D I
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage (RGS = 1MΩ), V
Gate–Source Voltage, V
Drain Current, I

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During soldering), T

D

, V

, and SOA Specified at Elevated Temperatures.

GS(th)

DSS

DGR

GS

= +25°C), P

C

stg

D

J

thJC

thJA

L

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .

30°C/W. . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I

Gate–Body Leakage Current, Forward I
Gate–Body Leakage Current, Reverse I

(BR)DSSID

DSS

GSSF
GSSR

ON Characteristics (Note 1)
Gate Threshold Voltage V

Static Drain–Source On Resistance r
Drain–Source ON–Voltage V

Forward Transconductance g

GS(th)

DS(on)

DS(on)

fs

Dynamic Characteristics

Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C

iss

oss

rss

Switching Characteristics (TJ = +100°C, Note 1)

= 0.25mA, VGS = 0 60 – – V
VGS = 0, VDS = Max Rating – – 0.2 mA
VGS = 0, VDS = 48V, TJ = +125°C – – 1.0 mA
VDS = 0, V
VDS = 0, V

= 20V – – 100 nA

GSF

= 20V – – 100 nA

GSR

VDS = VGS, ID = 1mA 2.0 – 4.5 V
VDS = VGS, ID = 1mA, TJ = +100°C 1.5 – 4.0 V
VGS = 10V, ID = 6A – – 0.2

Ω

VGS = 10V, ID = 12A – – 3.0 V
VGS = 10V, ID = 6A, TJ = 100°C –

–

2.8 V

VDS = 15V, ID = 6A 4 – – mhos

VDS = 25V, VGS = 0,
f = 1MHz

– – 400 pf
– – 300 pf
– – 100 pf

Turn–On Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

Source Drain Diode Characteristics (Note 1)
Forward ON Voltage V
Forward Turn–On Time t
Reverse Recovery Time t

SD
on

rr

Internal Package Inductance

Internal Drain Inductance L

Internal Source Inductance L

d

s

VDD = 25V, ID = 0.5 Rated ID,
R

= 50Ω

gen

VDS = 48V, VGS = 10V,
ID = Rated I

D

IS = Rated ID, VGS = 0

Measured from the contact screw
on tab to center of die

Measured from the drain lead 0.25”
from package to center of die

Measured from the source lead

0.25” from package to source bond
pad

– – 60 ns
– – 160 ns
– – 80 ns
– – 110 ns
– 13 26 nC
– 6 – nC
– 7 – nC

– 1.8 3.2 V

Limited by stray inductance

– 300 – ns

– 3.5 – nH

– 4.5 – nH

– 7.5 – nH

Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.