NTE NTE2389 Datasheet
NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, V
Drain–Gate Voltage (R
Drain Current, I
D
Continuous 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 152A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Maximum Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R
DS
= 20kΩ), V
GS
GS
DGR
D
J
stg
thJC
thJA
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Static Ratings
Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate–Source Leakage Current I
Drain–Source On–State Resistance R
Dynamic Ratings
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
(TA = +25°C unless otherwise specified)
DSSID
GS(th)ID
DSS
GSS
DS(on)ID
oss
VDS = 60V,
VGS = 0
VGS = ±30V, VDS = 0 – 10 100 nA
ID = 20A, VDS = 25V 8 13.5 – mhos
fs
VDS = 25V, VGS = 0, f = 1MHz – 1650 2000 pF
iss
rss
= 0.25mA, VGS = 0 60 – – V
= 1mA, VDS = V
= 20A, VGS = 10V – 40 45 mΩ
GS
TJ = +25°C – 1 10 µA
TJ = +125°C – 0.1 1.0 mA
2.1 3.0 4.0 V
– 560 750 pF
– 300 400 pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Ratings (Cont’d)
Turn–On Time t
Turn–Off Time t
d (on)
d (off)
Internal Drain Inductance L
Internal Source Inductance L
Reverse Diode
Continuous Reverse Drain Current I
Pulsed Reverse Drain Current I
DRM
Diode Forward On–Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
t
t
DR
SD
rr
VCC = 30V, VGS = 10V,
ID = 3A, RGS = 50Ω
r
– 25 40 ns
– 60 90 ns
– 125 160 ns
f
Measured from contact screw
d
– 100 130 ns
– 3.5 – nH
on tab to center of die
Measured from drain lead 6mm
– 4.5 – nH
from package to center of die
Measured from source lead
s
– 7.5 – nH
6mm from package to source
bond pad
– – 41 A
– – 164 A
IF = 41A, VGS = 0 – 1.4 2.0 V
IF = 41A, VGS = 0, VR = 30V
–diF/dt = 100A/µs
rr
– 60 – ns
– 0.3 – µC
.147 (3.75)
Dia Max
.070 (1.78) Max
Gate
.100 (2.54)
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab
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