NTE NTE2389 Datasheet

NTE2389
MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain–Source Voltage, V
Drain–Gate Voltage (R
Drain Current, I

D

Continuous 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed 152A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–Source Voltage, V
Maximum Power Dissipation, P
Operating Junction Temperature, T
Storage Temperature range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R

DS

= 20kΩ), V

GS

GS

DGR

D

J

stg

thJC

thJA

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

60°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Ratings

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate–Source Leakage Current I
Drain–Source On–State Resistance R

Dynamic Ratings

Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

(TA = +25°C unless otherwise specified)

DSSID

GS(th)ID

DSS

GSS

DS(on)ID

oss

VDS = 60V,
VGS = 0

VGS = ±30V, VDS = 0 – 10 100 nA

ID = 20A, VDS = 25V 8 13.5 – mhos

fs

VDS = 25V, VGS = 0, f = 1MHz – 1650 2000 pF

iss

rss

= 0.25mA, VGS = 0 60 – – V
= 1mA, VDS = V

= 20A, VGS = 10V – 40 45 mΩ

GS

TJ = +25°C – 1 10 µA
TJ = +125°C – 0.1 1.0 mA

2.1 3.0 4.0 V

– 560 750 pF
– 300 400 pF

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Ratings (Cont’d)

Turn–On Time t

Turn–Off Time t

d (on)

d (off)

Internal Drain Inductance L

Internal Source Inductance L

Reverse Diode

Continuous Reverse Drain Current I
Pulsed Reverse Drain Current I

DRM

Diode Forward On–Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

t

t

DR

SD

rr

VCC = 30V, VGS = 10V,
ID = 3A, RGS = 50Ω

r

– 25 40 ns
– 60 90 ns
– 125 160 ns

f

Measured from contact screw

d

– 100 130 ns
– 3.5 – nH

on tab to center of die
Measured from drain lead 6mm

– 4.5 – nH

from package to center of die
Measured from source lead

s

– 7.5 – nH
6mm from package to source
bond pad

– – 41 A

– – 164 A

IF = 41A, VGS = 0 – 1.4 2.0 V
IF = 41A, VGS = 0, VR = 30V

–diF/dt = 100A/µs

rr

– 60 – ns

– 0.3 – µC

.147 (3.75)

Dia Max

.070 (1.78) Max

Gate

.100 (2.54)

.420 (10.67)

Max

.110 (2.79)

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Source

Drain/Tab