NTE NTE2388 Datasheet

NTE2388
MOSFET

N–Channel Enhancement Mode,

High Speed Switch

Description:

The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.

Features:

D Silicon Gate for Fast Switching Speeds
D Low r

DS(on)

D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I

Continuous

Peak

Total Power Dissipation (T

Derate Above 25°C 1W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Maximum Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Maximum Thermal Resistance, Junction–to–Ambient, R
Maximum Lead Temperature (During soldering, 1/8” from case for 5sec), T

to Minimize On–Losses. Specified at Elevated Temperatures.

DSS

= 20kΩ), V

GS

GS

D

T

= +25°C 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

DGR

TC = +100°C11A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +25°C 72A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= +25°C), P

C

stg

D

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thJC

thJA

L

1°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I

Gate–Body Leakage Current, Forward I
Gate–Body Leakage Current, Reverse I

(BR)DSSID

DSS

GSSF
GSSR

ON Characteristics (Note 1)
Gate Threshold Voltage V
Static Drain–Source On Resistance R
On–State Drain Current I
Forward Transconductance g

GS(th)
DS(on)VGS
D(on)

fs

Dynamic Characteristics

Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C

iss

oss

rss

Switching Characteristics (Note 1)
Turn–On Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain Charge Q

d(on)

r

d(off)

f

g
gs
gd

Source Drain Diode Characteristics (Note 1)

= 250µA, VGS = 0 200 – – V
VGS = 0, VDS = Max Rating – – 200 µA
VGS = 0, VDS = 160V,

T

= +125°C

C

VDS = 0, V
VDS = 0, V

= 20V – – 100 nA

GSF

= 20V – – 100 nA

GSR

– – 1000 µA

VDS = VGS, ID = 250µA 2 – 4 V

= 10V, ID = 10A – – 0.18 Ω
VGS = 10V, VDS ≥ 3.2V 18 – – A
VDS ≥ 3.2V, ID = 10A 6 – – mhos

VDS = 25V, VGS = 0,
f = 1MHz

– – 1600 pf
– – 750 pf
– – 300 pf

VDD [ 75V, ID = 10A
Rg = 4.7Ω

PEAK

,

– – 30 ns
– – 60 ns
– – 80 ns
– – 60 ns

VDS = 160V, VGS = 10V,
ID = Rated I

D

– 38 60 nC
– 16 – nC
– 22 – nC

Forward ON Voltage V
Forward Turn–On Time t
Reverse Recovery Time t

SD

on

IS = Rated ID, VGS = 0

rr

Internal Package Inductance

Internal Drain Inductance L

Measured from the contact

d

screw on tab to center of die
Measured from the drain lead

0.25” from package to center
of die

Internal Source Inductance L

Measured from the source

s

lead 0.25” from package to
source bond pad

Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

– 1.8 2.0 V

Limited by stray inductance

– 450 – ns

– 3.5 – nH

– 4.5 – nH

– 7.5 – nH