NTE NTE2386 Datasheet
NTE2386
MOSFET
N–Channel Enhancemen Mode,
High Speed Switch
Description:
The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching,
ease of paralleling and temperature stability, and is suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
Features:
• Repetitive Avalanche Ratings
• Dynamic dv/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
Absolute Maximum Ratings:
Continuous Drain Current, I
(TC = +25°C) 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(T
= +100°C) 2.8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Pulsed Drain Current (Note 1), I
Maximum Power Dissipation (T
(Derate linearly above +25°C) 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–to–Source Voltage, V
Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Repetitive or Non–Repetitive, Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery (Note 3), dv/dt 3.0V/mS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case for 10s), T
D
DM
= +25°C), P
C
GS
stg
AR
J
AS
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
670mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AR
6.2A. . . . . . . . . . . . . . . . . . . . . . . . . .
13mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+300°C. . . . . . . . . .
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
DS
Ω
Parameter Symbol Test Conditions Min Typ Max Unit
Breakdown Voltage
BV
VGS = 0V, ID = 250µA 600 – – V
DSS
Drain–to–Source
Static Drain–to–Source
R
DS(on)VGS
= 10V, ID = 3.4A, Note 4 – 0.97 1.2 Ω
On–State Resistance
On–State Drain Current I
Gate Threshold Voltage V
D(on)
GS(HL)VDS
VDS > ID(on) x RDS(on) Max,
= 10V, Note 4
V
GS
6.2 – – A
= VGS, ID = 250µA 2.0 – 4.0 V
Forward Transconductance gs VDS = 60V, IDC = 3.4A, Note 4 4.7 70 – mhos
Zero Gate Voltage Drain Current I
Forward Leakage Current
DSS
I
GSS
VDS = Max. Rating VCS = 0V – – 250
VDS = 0.8 x Max Rating , VSS = 0V,
= 125°C
T
J
– – 1000
µA
VGS = 20V – – 100 nA
Gate–to–Source
Reverse Leakage Current
I
GSS
VGS = –20V – – –100 nA
Gate–to–Source
Total Gate Charge Q
Gate–to–Source Charge Qgs
Gate–to–Drain (“Miller”) Charge Qgd
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Internal Drain Inductance L
d(on)
r
d(off)
f
D
g
VGS = 10V, ID = 6.2A,
= 0.8 x Max Rating
V
DS
(independent of operating temperature)
VDD = 300V, fD = 6.2A,
RG = 9.1Ω, RD = 47
(independent at operating temperature)
(independent at operating temperature)
Measured from the drain lead, 6mm
– 4.0 80 nC
– 6.5 8.2 nC
– 20 30 nC
– 1.3 20
ns
– 18 27
– 65 83
– 20 20
– 5.0 –
nH
(0.25 In) from packaged to center of
die.
Internal Source Inductance L
Measured from the source lead, 6mm
S
(0.25 in) from package to source
bonding pad.
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
oss
VGS = 0V, VDS = 25V, f = 1.0MHz
iss
rss
Source–Drain Diode Ratings and Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage V
Reverse Recovery Time t
Forward Turn–On Time t
I
I
S
SM
SO
rr
on
Note 1 – – 26 A
TJ = 25°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.5 V
TJ = 25°C, IF = 6.2A
di/dt = 100A/µs
Intrinsic turn–on time is negligible Turn on speed is substantially
controlled by L
S
+ L
– 18 –
– 1300 –
pF
– 150 –
– 30 –
– – 6.2 A
1.8 3.6 7.9 µC
D
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