NTE NTE2384 Datasheet

NTE2384
MOSFET

N–Channel Enhancement Mode,

High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Pulsed Drain Current (T
Continuous Drain Current, I

TC = +30°C 6.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Total Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Maximum Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Junction–to–Ambient, R

DS

= 20kΩ), V

GS

GS

= +25°C), I

C

D

= +25°C), P

C

DGR

DM

tot

J

stg

thJC

thJA

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

24A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

35°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I

Gate–Body Leakage Current I
Gate Threshold Voltage V
Static Drain–Source On Resistance R

Dynamic Characteristics

Forward Transconductance g
Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C
Turn–On Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t

(TC = +25°C unless otherwise specified)

(BR)DSSID

DSS

GSS
GS(th)
DS(on)VGS

iss

oss

rss

d(on)

d(off)

VGS = 0, VDS = 800V, TJ = +25°C – 20 250 µA
VGS = 0, VDS = 800V, TJ = +125°C – 0.1 1.0 mA
VDS = 0, VGS = ±20V – 10 100 nA
VDS = VGS, ID = 1mA 2.1 3.0 4.0 V

VDS = 25V, ID = 3A 1.8 3.0 – mho

fs

VDS = 25V, VGS = 0, f = 1MHz

VDD = 30V, ID = 2.6A, VGS = 10V,
RGS = 50Ω, R

r

f

= 250µA, VGS = 0 800 – – V

= 10V, ID = 3A – 1.3 1.5

– 3900 5000 pf
– 200 350 pf
– 80 140 pf
– 60 90 ns

= 50Ω

gen

– 90 140 ns
– 330 430 ns
– 110 140 ns

Ω

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics (Cont’d)

Internal Drain Inductance L

Internal Source Inductance L

Source–Drain Diode Ratings and Characteristics

Continuous Reverse Drain Current I
Pulsed Reverse Drain Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

DR

DRM

SD

rr

Measured from contact screw on

D

header closer to source pin and
center of die

Measured from the source lead

S

6mm from package to source
bonding pad

TC = +25°C – – 6 A
TC = +25°C – – 24 A
IF = 12A, VGS = 0, TJ = +25°C – 1.1 1.5 V
IF = 6A, TJ = +25°C – 1800 – ns
VGS = 0, VR = 100V, TJ = +25°C,

rr

di

.135 (3.45) Max

.350 (8.89)

/dt = 100A/µs,

F

.875 (22.2)

Dia Max

– 5.0 – nH

– 12.5 – nH

– 25 – µC

Seating
Plane

.215 (5.45)

.430

(10.92)

Source

.040 (1.02).312 (7.93) Min

1.187 (30.16)

.665

(16.9)

.156 (3.96) Dia
(2 Holes)

.188 (4.8) R Max

.525 (13.35) R Max

Drain/CaseGate