NTE NTE2382 Datasheet

NTE2382
MOSFET

N–Channel Enhancement Mode,

High Speed Switch

(Compl to NTE2383)

Description:

The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage,
high speed power switching applications such as switching regulators, converters, solenoid, and relay
drivers.

Features:

D Lower R
D Improved Inductive Ruggedness
D Fast Switching Times
D Rugged Polysilicon Gate Cell Structure
D Lower Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability

DS(ON)

Absolute Maximim Ratings:

Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Continuous Drain Current, I

= 1MΩ, Note 1), V

GS

GS

D

DSS

DGR

TC = +25°C 9.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

= +100°C 6.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

Drain Current, Pulsed (Note 3), I
Gate Current, Pulsed, I

GM

Single Pulsed Avalanvhe Energy (Note 4), E
Avalanche Current, I
Total Power Dissipation (T

AS

C

DM

= +25°C), P

AS

D

Derate Above 25°C 0.4W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Case–to–Sink (Note 5), R
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T

Note 1. T

= +25° to +150°C

J

opr

thJA

thJC

thCS

L

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.
Note 4. L = 64mH, V

= 25V, RG = 25Ω, Starting TJ = +25°C.

DD

Note 5. Mounting surface flat, smooth, and greased.

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

37A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Zero Gate Voltage Drain Current I

Gate–Body Leakage Current, Forward I
Gate–Body Leakage Current, Reverse I
Gate Threshold Voltage V
Static Drain–Source On–Resistance r
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q

(BR)DSSVGS

DSS

GSS
GSS

GS(th)

DS(on)

FS

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Source–Drain Diode Ratings and Characteristics

Continuous Source Current

I

S

(Body Diode)
Pulse Source Current (Body Diode) I
Diode Forward Voltage V

Reverse Recovery Time t

SM

SD

rr

= 0, ID = 0.25mA 100 – – V
VDS = 100V, VGS = 0 – – 0.25 mA
VDS = 80V, VGS = 0, TJ = +125°C – – 1.0 mA
VGS = 20V – – 100 nA
VGS = 20V – – –100 nA
VDS = VGS, ID = 0.25mA 2.0 – 4.0 V
VGS = 10V, ID = 4.6A, Note 2 – – 0.27 Ω
VDS ≥ 50V, ID = 4.6A, Note 2 2.7 4.1 – mhos
VDS = 25V, VGS = 0, f = 1MHz – 400 – pF

VDD = 50V, ID = 9.2A, ZO = 18Ω,
MOSFET switching times are
essentially independent of operating

essentially independent of operating
temperature

VGS = 10V, VDS = 80V, ID = 9.2A,
Gate charge is essentially
independent of operating

independent of operating
temperature

Note 3 – – 37 A
TJ = +25°C, IS = 9.2A, VGS = 0V,

Note 2
TJ = +25°C, IF = 9.2A,

dI

/dt = 100A/µs

F

– 130 – pF
– 40 – pF
– 8.8 13.0 ns
– 30 45 ns
– 19 27 ns
– 20 30 ns
– – 23 nC
– 4.6 – nC
– 9.1 – ns

– – 9.2 A

– – 2.5 V

– 110 240 ns

Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.