NTE NTE2380, NTE2381 Datasheet
NTE2380 (N–Ch) & NTE2381 (P–Ch)
Complementary Silicon Gate MOSFETs
Enhancement Mode, High Speed Switch
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs i n a TO220 type
package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
Drain–Source Voltage, V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
D
DSS
= 1MΩ), V
GS
GS
DGR
Continuous
NTE2380 2.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 2.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
NTE2380 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
D
NTE2380 40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
NTE2380 –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
NTE2380 –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
thJA
thJC
NTE2380 3.12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 1.67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
NTE2380 +300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2381 +275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V
Zero Gate Voltage Drain Current
(BR)DSSVGS
I
DSS
NTE2380
NTE2381 – – 0.2 mA
NTE2380 & NTE2381 VDS = 400V, VGS = 0, TJ = +125°C – – 1.0 mA
Gate–Body Leakage Current, Forward
I
GSSF
NTE2380
NTE2381 – – 100 nA
Gate–Body Leakage Current, Reverse
I
GSSR
NTE2380
NTE2381 – – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
V
GS(th)
NTE2380
NTE2381 ID = 1mA 2.0 – 4.5 V
Static Drain–Source On–Resistance
r
DS(on)
NTE2380
NTE2381 – – 6 Ω
Forward Transconductance
g
FS
NTE2380
NTE2381 VDS = 15V 0.5 – – mhos
Dynamic Characteristics
Input Capacitance
C
iss
NTE2380
NTE2381 – – 100 pF
Output Capacitance
C
oss
NTE2380
NTE2381 – – 200 pF
Reverse Transfer Capacitance
C
rss
NTE2380
NTE2381 – – 80 pF
Switching Characteristics (Note 1)
Turn–On Time
NTE2380
t
d(on)
NTE2381
Rise Time
NTE2380
t
r
NTE2381 VDS = 125V – – 100 ns
Turn–Off Time
NTE2380
t
d(off)
NTE2381 VDS = 125V – – 150 ns
Fall Time
NTE2380
t
f
NTE2381 VDS = 125V – – 50 ns
= 0, ID = 0.25mA 500 – – V
VDS = 500V, VGS = 0
V
= 20V, VDS = 0
GSF
V
= 20V, VDS = 0
GSF
VDS = V
GS
ID = 0.25mA
VGS = 10V, ID = 1A
ID = 1A VDS ≥ 7.5V
VDS = 25V, VGS = 0, f = 1MHz
– – 0.25 mA
– – 500 nA
– – 500 nA
2.0 – 4.0 V
– – 3 Ω
1 – – mhos
– – 400 pF
– – 150 pF
– – 40 pF
ID = 1A,
R
= 50Ω
gen
VDD [ 200V
– – 60 ns
VDS = 125V – – 50 ns
VDD [ 200V
VDD [ 200V
VDD [ 200V
– – 50 ns
– – 60 ns
– – 30 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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