NTE NTE238 Datasheet
NTE238
Silicon NPN Transistor
Color TV, Horizontal Output
Description:
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use
in deflection circuits.
Features:
D V
D Safe Operating Area @ 50µs = 20A, 400V
Absolute Maximum Ratings;
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current–Continuous, I
Base Current–Continuous, I
Emitter Current–Continuous, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), T
= 1500V
CEX
CEX
EB
C
B
E
= +25°C), P
C
D
Derate above 25°C 0.8W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
stg
thJC
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+275°C. . . . . . . . .
L
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
ON Characteristics (Note 1)
Collector–Emitter Saturation Voltage V
Base Emitter Saturation Voltage V
SWITCHING CHARACTERISTICS
Fall Time t
(TC =+25°C unless otherwise specified)
CEO(sus)VC
CES
EBO
CE(sat)IC
BE(sat)IC
f
= 50mA, IB = 0 750 – – V
VCE = 1500V, VBE = 0 – – 0.25 mA
VBE = 5V, IC = 0 – – 0.1 mA
= 5A, IB = 1A – – 5.0 V
= 5A, IB = 1A – – 1.5 V
IC = 5A, IB1 = 1A, LB = 8µH – 0.4 1.0 µs
Note 1. Pulse test: Pulse Width ≤ 300µs, Duty Cycle = 2%.
.135 (3.45) Max
.350 (8.89)
.215 (5.45)
.430
(10.92)
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
E
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
C/CaseB
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