NTE NTE2379 Datasheet

NTE2379
MOSFET

N–Channel, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Gate–Source Voltage, V
Drain Current, I

D

Continuous (VGS = 10V)

T

= +25°C 6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

TC = +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (Note 1) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current (Pulsed), I
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 3V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

Derate Above 25°C 1.0W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Thermal Resistance:

Maximum Junction–to–Case, R

Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R

Maximum Junction–to–Ambient (Free Air Operation), R

GS

GM

AR

= +25°C), P

C

stg

D

thJC

AR

AS

J

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

1.0°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

thCS

thJA

0.5°C/W. . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

570mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

6.2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

13mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

125W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . .

62°C/W. . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. V
Note 3. I

= 50V, starting TJ = +25°C, l = 27mH, RG = 25Ω, IAS = 6.2A.

DD

≤ 6.2A, di/dt ≤ 80A/µA, VDD ≤ V

SD

(BR)DSS

, TJ ≤ +150°C.

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Drain–Source Leakage Current I

DSSVGS

GS(th)VDS

GSS
GSS
DSS

VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = 600V, VGS = 0 – – 100 µA
VDS = 480V, VGS = 0, TC = +150°C – – 500 µA

Static Drain–Source ON Resist-

R

DS(on)VGS

ance
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Internal Drain Inductance L
Internal Source Inductance L

VDS ≥ 100V, ID = 3.7A, Note 4 4.7 – – mhos

fs

VGS = 0V, VDS = 25V, f = 1MHz – 1300 – pF

iss

oss

rss

VDD = 300V
RD = 47Ω, Note 4

r

f

VGS = 10V, ID = 6.2A, VDS = 360V

g
gs
gd

Between lead, 6mm (.250 in) from package

D

and center of die contact

S

Source–Drain Diode Ratings and Characteristics

= 0V, ID = 250µA 600 – – V

= VGS, ID = 250µA 2.0 – 4.0 V

= 10V, ID = 3.7A, Note 4 – – 1.2 Ω

– 160 – pF
– 30 – pF

ID = 6.2A, RG = 9.1Ω,

,

– 32 – ns
– 18 – ns
– 55 – ns
– 20 – ns
– – 60 nC
– – 8.3 nC
– – 30 nC
– 4.5 – nH
– 7.5 – nH

Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

SM

(Body Diode) – – 6.2 A

S

(Body Diode) Note 1 – – 25 A
TJ = +25°C, IS = 6.2A, VGS = 0V, Note 4 – – 1.5 V

SD

TJ = +25°C, IF = 6.2A, di/dt = 100A/µs,

rr

Note 4

rr

on

Intrinsic turn–on time is neglegible (turn–on is dominated by LS + LD)

– 450 940 ns
– 3.8 7.9 µC

Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.