NTE NTE2377 Datasheet

NTE2377
MOSFET

N–Channel,

Enhancement Mode, High Speed

Description:

The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.

Features:

D Low ON–State Resistance
D Very High–Speed Switching
D Converters

Absolute Maximum Ratings:

Drain–Source Voltage, V
Gate–Source Voltage, V
DC Drain Current, I

DSS

GSS

D

Pulsed Drain Current (Note 1), I
Allowable Power Dissipation (T
Maximum Channel Temperature, T
Storage Temperature Range, T

(TA = +25°C unless otherwise specified)

DP

= +25°C), P

C

ch

stg

D

900V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

36A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Width ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and

source.

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–Source Breakdown Voltage V
Zero–Gate Voltage Drain Current I
Gate–Source Leakage Current I
Cutoff Voltage V

(TA = +25°C unless otherwise specified)

(BR)DSSID

DSS
GSS

GS(off)VDS

= 1mA, VGS = 0 900 – – V
VGS = 0, VDS = Max Rating – – 1.0 mA
VDS = 0, VGS = ±30V – – ±100 nA

= 10V, ID = 1mA 2 – 3 V
Static Drain–Source On Resistance R
Forward Transconductance g

DS(on)VGS

= 10V, ID = 4A – 1.2 1.6 Ω

VDS = 20V, ID = 4A 2.5 5.0 – mho

fs

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Input Capactiance C
Output Capacitance C
Reverse Transfer Capactiance C
Turn–On Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Diode Forward Voltage V

.190 (4.82)

iss

oss

rss

r

f

SD

– 1600 – pf

VDS = 20V, f = 1MHz

– 500 – pf
– 350 – pf
– 20 – ns

VDD = 200V, ID = 4A,

VDD = 200V, ID = 4A,

= 10V, RGS = 50Ω

V

GS

– 80 – ns
– 350 – ns
– 150 – ns

IS = 8A, VGS = 0 – – 1.8 V

.615 (15.62)

.787

(20.0)

.591

(15.02)

.787

(20.0)

D

.126

(3.22)

Dia

GDS

.215 (5.47)