NTE NTE2376 Datasheet

NTE2376
MOSFET

N–Ch, Enhancement Mode

High Speed Switch

Features:

D Dynamic dv/dt Rating
D Repetitive Avalanche Rated
D Isolated Central Mounting Hole
D Fast Switching
D Ease of Paralleling
D Simple Drive Requirements

Absolute Maximum Ratings:

Continuous Drain Current (VGS = 10V), I

TC = +25°C 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= +100°C 19A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

T

C

Pulsed Drain Current (Note 1), I
Power Dissipation (T

= +25°C), P

C

DM

D

Derate Linearly Above 25°C 1.5W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate–to–Source Voltage, V

GS

Single Pulse Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I

AR

Repetitive Avalanche Energy (Note 1), E

Peak Diode Recovery dv/dt (Note 3), dv/dt 5V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Lead Temperature (During Soldering, 1.6mm from case for 10sec), T

Mounting Torque (6–32 or M3 Screw) 10 lbfin (1.1Nm). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R

D

AR

AS

J

thJC

thJA

L

thCS

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.65°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.24°C/W. . . . . . . . . . .

120A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

190W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

410mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

19mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+300°C. . . . . . . . . . . . . . . . .

40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
Note 3. ISD ≤ 30A, di/dt ≤ 190A/µs, VDD ≤ V

= 50V, starting TJ = +25°C, L = 683µH, RG = 25Ω, IAS = 30A

DD

(BR)DSS

, TJ ≤ +150°C

Electrical Characteristics: (TJ = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Drain–to–Source Breakdown Voltage V
Breakdown Voltage Temp. Coefficient ∆V

(BR)DSSVGS

(BR)DSS

∆T

Static Drain–to–Source On–Resistance R
Gate Threshold Voltage V

DS(on)
GS(th)

Forward Transconductance g
Drain–to–Source Leakage Current I

Gate–to–Source Forward Leakage I
Gate–to–Source Reverse Leakage I

DSS

GSS
GSS

Total Gate Charge Q
Gate–to–Source Charge Q
Gate–to–Drain (“Miller”) Charge Q
Turn–On Delay Time t

d(on)

Rise Time t
Turn–Off Delay Time t

d(off)

Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Input Capacitance C
Output Capacitance C
Reverse Transfer Capaticance C

fs

gs
gd

r

f
D
S

iss

oss

rss

= 0V, ID = 250µA 200 – – V

Reference to +25°C, ID = 1mA – 0.27 – V/°C

J

VGS = 10V, ID = 18A, Note 4 – – 0.085 Ω
VDS = VGS, ID = 250µA 2.0 – 4.0 V
VDS = 50V, ID = 18A, Note 4 12 – – mhos
VDS = 200V, VGS = 0V – – 25 µA
VDS = 160V, VGS = 0V, TJ = +125°C – – 250 µA
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
ID = 30A, VDS = 160V, VGS = 10V,

g

Note 4

– – 140 nC
– – 28 nC
– – 74 nC

VDD = 100V, ID = 30A, RG = 6.2Ω,
RD = 3.2Ω, Note 4

– 16 – ns
– 86 – ns
– 70 – ns
– 62 – ns

Between lead, .250in. (6.0) m m from
package and center of die contact

VGS = 0V, VDS = 25V, f = 1MHz

– 5.0 – nH
– 13.0 – nH
– 2800 – pF
– 780 – pF
– 250 – pF

Source–Drain Ratings and Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Continuous Source Current (Body Diode) I
Pulsed Source Current (Body Diode) I
Diode Forward Voltage V

S

SM

SD

Note 1 – – 120 A
TJ = +25°C, IS = 30A, VGS = 0V,

– – 30 A

– – 2.0 V

Note 4
Reverse Recovery Time t
Reverse Recovery Charge Q
Forward Turn–On Time t

on

TJ = +25°C, IF = 30A,

rr

di/dt = 100A/µs, Note 4

rr

Intrinsic turn–on time is neglegible (turn–on is dominated by LS+LD)

– 360 540 ns
– 4.6 6.9 µC

Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.