NTE NTE2368, NTE2367 Datasheet
NTE2367 (NPN) & NTE2368 (PNP)
Silicon Complementary Transistors
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Digital
Features:
D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
/2 Built–In 4.7k Bias Resistors
Absolute Maximum Ratings
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
: (TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
C
NTE2367 300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2368 200mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Current Gain–Bandwidth Product
NTE2367
NTE2368 – 200 – MHz
: (TA = +25°C unless otherwise specified)
stg
J
–55° to +160°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CBO
I
CEO
EBO
f
FE
VCB = 40V, IE = 0 – – 0.1 µA
VCE = 40V, IB = 0 – – 0.5 µA
VEB = 5V, IC = 0 170 250 330 µA
VCE = 5V, IC = 10mA 30 – –
VCE = 10V, IC = 5mA
T
– 250 – MHz
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Capacitance C
VCB = 10V, f = 1MHz
ob
– 3.0 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Input OFF Voltage V
Input ON Voltage V
CE(sat)IC
(BR)CBOIC
(BR)CEOIC
I(off)
I(on)
Input Resistance R
Input Resistance Ratio R1/R
Collector
(Output)
R
1
Base
(Input)
R
2
= 5mA, IB = 0.25mA – 0.1 0.3 V
= 10µA, IE = 0 50 – – V
= 100µA, RBE = ∞ 50 – – V
VCE = 5V, IC = 100µA 1.0 – 1.5 V
VCE = 200mV, IC = 5mA 1.1 – 2.0 V
1
2
3.29 4.7 6.11 kΩ
0.9 1.0 1.1
Schematic Diagram
Collector
(Output)
R
1
Base
(Input)
R
2
NPN
Emitter
(GND)
.050 (1.27)
.050 (1.27)
Emitter
(GND)
PNP
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
ECB
.035 (0.9)
.102
(2.6)
Max
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