NTE NTE2364, NTE2363 Datasheet
NTE2363 (NPN) & NTE2364 (PNP)
Silicon Complementary Transistors
High Current General Purpose Amp/Switch
Features:
D Low Saturation Voltage
D Large Current Capacity and Wide ASO
Applications:
D Power Supplies
D Relay Drivers
D Lamp Drivers
D Automotive Wiring
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EBO
C
(TA = +25°C unless otherwise specified)
CBO
CEO
Continuous 2A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Collector Dissipation, P
Junction Temperature, T
J
Storage Ambient Temperature Range, T
C
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For PNP device (NTE2364), voltage and current values are negative.
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain hFE (1) VCE = 2V, IC = 100mA 200 – 400
(TA = +25°C unless otherwise specified)
CBO
EBO
hFE (2) VCE = 2V, IC = 1.5A 40 – –
VCB = 50V, IE = 0 – – 0.1 µA
VEB = 4V, IC = 0 – – 0.1 µA
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Bandwidth Product f
T
VCE = 10V, IC = 50mA – 150 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2363
c
ob
NTE2364 – 22 – pF
Collector–Emitter Saturation Voltage
NTE2363
V
CE(sat)IC
NTE2364 – 0.3 0.7 V
VCB = 10V, f = 1MHz – 12 – pF
= 1A, IB = 50mA – 0.15 0.4 V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
.343
(8.73)
Max
.492
(12.5)
Min
BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
= 1A, IB = 50mA – 0.9 1.2 V
= 10µA, IE = 0 60 – – V
= 1mA, RBE = ∞ 50 – – V
= 10µA, IC = 0 6 – – V
.024 (0.62) Max
.102 (2.6) Max
.018 (0.48)
.118 (3.0) Max
.236 (6.0)Dia Max
E C B
.059 (1.5) Typ
.197 (5.0)
.102 (2.6) Max
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