NTE NTE236 Datasheet
NTE236
Silicon NPN Transistor
Final RF Power Output
(PO = 16W, 27MHz, SSB)
Description:
The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF
band mobile radio applications.
Features
D High Power Gain: G
:
≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
pe
D Ability to Withstand Infinite VSWR Load when Operated at:
= 16V, PO = 20W, f = 27MHz
V
CC
Application:
D 10 to 14 Watt Output Power Class AB Amplifier Applications in HF band
Absolute Maximum Ratings
Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I
Collector Dissipation, P
C
C
: (TC = +25°C unless otherwise specified)
CBO
= ∞), V
BE
EBO
CEO
TA = 25°C 1.7W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= 25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
J
stg
thJA
thJC
60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
73.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.25°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter–Base Breakdown Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
(BR)EBOIE
(BR)CBOIC
(BR)CEOIC
Collector Cutoff Current I
Emitter Cutoff Current I
DC Forward Current Gain h
Output Power P
Collector Efficiency h
CBO
EBO
FE
O
C
= 5mA, IC = 0 5 – – V
= 1mA, IE = 0 60 – – V
= 10mA, RBE = ∞ 25 – – V
VCB = 30V, IE = 0 – – 100 µA
VEB = 4V, IC = 0 – – 100 µA
VCE = 12V, IC = 10mA, Note 1 10 50 180 –
VCC = 12V, Pin = 1W, f = 27MHz 16 18 – W
VCC = 12V, Pin = 1W, f = 27MHz 60 70 – %
Note 1. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%.
.142 (3.62) Dia
.126 (3.2)
C
.051 (1.3).358 (9.1)
.485
(12.32)
.395
(9.05)
BCE
.189
(4.8)
.485
(12.32)
Min
.100 (2.54) .019 (0.48)
.177 (4.5)
.347 (9.5) .122 (3.1)
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