NTE NTE2359, NTE2360 Datasheet

NTE2359 (NPN) & NTE2360 (PNP)

Silicon Complementary Transistors

Digital w/2 Built–In 47k Bias Resistors

Features:

D Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ)
D Small–Sized Package (TO92 type)

Applications:

D Switching Circuit
D Inverter
D Interface Circuit
D Driver

Absolute Maximum Ratings

Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I

C

: (TA = +25°C unless otherwise specified)

CBO

CEO

EBO

Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I

Emitter Cutoff Current I
DC Current Gain h
Gain Band–width Product

NTE2359

NTE2360 – 200 – MHz

C

J

stg

: (TA = +25°C unless otherwise specified)

CBO

I

CEO
EBO

f

FE

VCB = 40V, IE = 0 – – 0.1 µA
VCE = 40V, IB = 0 – – 0.5 µA
VEB = 5V, IC = 0 30 53 80 µA
VCE = 5V, IC = 5mA 50 – –
VCE = 10V, IC = 5mA

T

–55° to +160°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

– 250 – MHz

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Capacitance

NTE2359

NTE2360 – 5.5 – pF

C

VCB = 10V, f = 1MHz

ob

– 3.7 – pF

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Input OFF Voltage V
Input ON Voltage V

CE(sat)IC
(BR)CBOIC
(BR)CEOIC

I(off)

I(on)

Input Resistance R
Input Resistance Ratio R1/R

Collector

(Output)

R

1

Base

(Input)

R

2

= 5mA, IB = 0.25mA – 0.1 0.3 V
= 10µA, IE = 0 50 – – V

= 100µA, RBE = ∞ 50 – – V
VCE = 5V, IC = 100µA 0.8 1.1 1.5 V
VCE = 200mV, IC = 5mA 1.0 2.5 5.0 V

1

2

32 47 62 kΩ

0.9 1.0 1.1

Schematic Diagram

Collector

(Output)

R

1

Base

(Input)

R

2

NPN

Emitter

(GND)

.050 (1.27)

.050 (1.27)

Emitter

(GND)

PNP

.165 (4.2)

Max

.126
(3.2)
Max

.071
(1.8)

.500

(12.7)

Max

ECB

.035 (0.9)

.102
(2.6)
Max