NTE NTE2355, NTE2356 Datasheet
NTE2355 (NPN) & NTE2356 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 10k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings
Collector to Base Voltage, V
Collector to Emitter Voltage, V
Emitter to Base Voltage, V
Collector Current, I
C
: (TA = +25°C unless otherwise specified)
CBO
CEO
EBO
Continuous 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 200mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Band–width Product
NTE2355
NTE2356 – 200 – MHz
C
J
stg
: (TA = +25°C unless otherwise specified)
CBO
I
CEO
EBO
f
FE
VCB = 40V, IE = 0 – – 0.1 µA
VCE = 40V, IB = 0 – – 0.5 µA
VEB = 5V, IC = 0 170 250 330 µA
VCE = 5V, IC = 10mA 50 – –
VCE = 10V, IC = 5mA
T
–55° to +160°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
– 250 – MHz
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Capacitance
NTE2355
NTE2356 – 5.5 – pF
C
VCB = 10V, f = 1MHz
ob
– 3.7 – pF
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Input OFF Voltage V
Input ON Voltage V
CE(sat)IC
(BR)CBOIC
(BR)CEOIC
I(off)
I(on)
Input Resistance R
Input Resistance Ratio R1/R
Collector
(Output)
R
1
Base
(Input)
R
2
= 10mA, IB = 0.5mA – 0.1 0.3 V
= 10µA, IE = 0 50 – – V
= 100µA, RBE = ∞ 50 – – V
VCE = 5V, IC = 100µA 0.8 1.1 1.5 V
VCE = 200mV, IC = 10mA 1.0 2.0 4.0 V
1
2
7.0 10.0 13.0 kΩ
0.9 1.0 1.1
Schematic Diagram
Collector
(Output)
R
1
Base
(Input)
R
2
NPN
Emitter
(GND)
.050 (1.27)
.050 (1.27)
Emitter
(GND)
PNP
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
ECB
.035 (0.9)
.102
(2.6)
Max
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