NTE NTE2354 Datasheet
NTE2354
Silicon NPN Transistor
High Voltage Horizontal Output for High Definition CRT
Applications:
D High–definition color display horizontal deflection output
Features:
D Fast speed: tf = 100ns Typ
D High breakdown voltage: V
D High reliability
CBO
= 1500V
Absolute Maximum Ratings
Collector–to–Base Voltage, V
: (TA = +25°C unless otherwise specified)
CBO
Collector–to–Emitter Voltage, V
Emitter–to–Base Voltage, V
Collector Current, I
C
Peak Collector Current, i
Collector Dissipation (T
Junction Temperature, T
EBO
cp
= +25°C), PC 150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
J
Storage Temperature Range, T
Electrical Characteristics
: (TA = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current I
Collector Sustain Voltage V
Emitter Cutoff Current I
Saturation Voltage
Collector–to–Emitter
Saturation Voltage
Base–to–Emitter
1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol Test Conditions Min Typ Max Unit
CES
CEO(sus)IC
EBO
V
CE(sat)IC
V
BE(sat)IC
VCE = 1500V, RBE = 0 – – 1.0 mA
= 100mA, IB = 0 800 – – V
VEB = 4V, IC = 0 – – 1.0 mA
= 8A, IB = 2.0A – – 5.0 V
= 8A, IB = 2.0A – – 1.5 V
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Current Gain h
Storage Time t
Fall Time t
FE
stg
VCE = 5V, IC = 1.0A 8 – – –
IC = 6A, IB1 = 1.2A, IB2 = –2.4A – – 3.0 µs
f
IC = 6A, IB1 = 1.2A, IB2 = –2.4A – 0.1 0.2 µs
.787
(20.0)
.591
(15.02)
.615 (15.62).190 (4.82)
C
.126
(3.22)
Dia
.787
(20.0)
BCE
.215 (5.47)
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