NTE NTE2351, NTE2352 Datasheet
NTE2351 (NPN) & NTE2352 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Features:
D High DC Current Gain: h
D Low Saturation Voltage: V
= 2000 Min @ VCE = 2V, IC = 1A
FE (1)
CE(sat)
= 1.5V Max @ IC = 3A
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
B
EBO
C
Collector Power Dissipation, P
(TA = +25°C unless otherwise specified)
CBO
CEO
C
TA = +25°C 1W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
= +25°C 15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Operating Junction Temperature, T
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut–Off Current I
Emitter Cut–Off Current I
Collector–Emitter Breakdown Voltage V
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Switching Characteristics
stg
(TA = +25°C unless otherwise specified)
J
CBO
EBO
(BR)CEOIC
FE (1)
h
FE (2)
CE(sat)IC
BE(sat)IC
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 100V, IE = 0 – – 20 µA
VEB = 5V, IC = 0 – – 2.5 mA
= 10mA, IB = 0 80 – – V
VCE = 2V, IC = 1A 2000 – –
VCE = 2V, IC = 3A 1000 – –
= 3A, IB = 6mA – – 1.5 V
= 3A, IB = 6mA – – 2.0 V
Turn–On Time t
Storage Time t
Fall Time t
on
stg
VCC = 30V, IB1 = –IB2 = 6mA,
Duty Cycle ≤ 1%
f
– 0.2 – µs
– 1.5 – µs
– 0.6 – µs
C
C
B
]4.5kΩ ]300Ω ]4.5kΩ ]300Ω
E
B
E
.343 (8.72) .148 (3.72)
.059 (1.5)
.256 (6.5)
.043 (1.1)
.406
(10.3)
.413
(10.5)
.032 (0.82)
.100 (2.54) .020 (.508)
BCE
.043 (1.1)
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